2SB595_2014 JMNIC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 4
Technical content
JMnic Product Specification Silicon PNP Power Transistors 2SB595 DESCRIPTION ·
- With TO-220C package
- Complement to type 2SD525
- High breakdown voltage :VCEO=-100V
- Low collector saturation volage : V CE(sat)=-2.0V(Max)
APPLICATIONS
- Power amplifier applications
- Recommend for 30W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION
1 Emitter
2 Collector;connected to
3 Base
Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -5 A IE Emitter current -5 A IB Base current -4 A PC Collectorl power dissipation TC=25℃ 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃
JMnic Product Specification Silicon PNP Power Transistors 2 S B 5 9 5 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=-50mA; IB=0 -100 V V(BR)EBO Emitter-base breakdown votage I E=-10mA; IC=0 -5 V VCEsat Collector-emitter saturation voltage I C=-4A;IB=-0.4 A -2.0 V VBE Base-emitter on voltage I C=-4A ; VCE=-5V -1.5 V ICBO Collector cut-off current V CB=-100V; IE=0 -100 μA IEBO Emitter cut-off current V EB=-5V; IC=0 -1 mA hFE-1 DC current gain I C=-1A ; VCE=-5V 40 240 hFE-2 DC current gain I C=-4A ; VCE=-5V 20 fT Transition frequency I C=-1A ; VCE=-5V 5 MHz COB Output capacitance I E=0; VCB=-10V;f=1MHz 270 pF hFE-1 classifications R O Y 40-80 70-140 120-240
JMnic Product Specification Silicon PNP Power Transistors 2SB595 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
JMnic Product Specification Silicon PNP Power Transistors 2SB595