2SB565 NJSEMI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

i, U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SB565

DESCRIPTION

  • Low Collector Saturation Voltage :VCE<satr-1.0(V)(Max)@lc=-2A
  • Collector-Emitter Breakdown Voltage- = -50V(Min)

APPLICATIONS

  • Designed for low frequency power amplifier and power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICM PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Total Power Dissipation @ TC=25°C Junction Temperature Storage Temperature Range VALUE -50 -50 150 -55-150 UNIT V V V A A W r 1 « I '^. FIH: 1 Base

2 Collector

3 Emitter

3 TO-220C package

H Maf v T r A T (_ K T f

  • B H -••V--H /"' i . >'•:'• r V
  • K- cl J i DIM A B C D F G H J K L Q R S U V mm MIN 15.50 9.90 4.20 0.70 3.40 4.98 2.68 0.44 13.00 1.10 2.70 2.30 1.29 6.45 8.66 MAX 15.90 10.20 4,50 0.90 3.70 5.18 2.90 0.60 13.40 1.45 2.90 2.70 1.35 6.65 8.86 rs NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to he both accurate and reliable at the time of eoi lo press. I lowever, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verity that datasheets are current before placing orders. Quality Semi-Conductors

Silicon PNP Power Transistor 2SB565

ELECTRICAL CHARACTERISTICS

TC=25'C unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VcE(sat) VBE(sat) ICBO hpE-1 hpE-2 fl PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc= -30mA; RBE= °° lc=-10M A;IE=0 lE=-10u A; lc=0 lc= -2A; IB= -0.2A lc= -2A; IB= -0.2A VGB= -50V ; IE= 0 lc= -1A; VCE= -4V lG=-0.1A;VcE=-4V lc= -0.5A; VCE= -4V MIN -50 -50 TYP. MAX -1.0 -1.2 200 UNIT V V V V V UA MHz Switching Times ton tstg toff Turn-on Time Storage Time Turn-off Time Vcc= -10.5V, IB1= -\\B2= -50mA, lc= -0.5A 0.3 2.5 3.0 u s M s u s

  • hpE-1 Classifications B 60-120 C 100-200