2SB565 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc Website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB565
DESCRIPTION
- Low Collector Saturation Voltage :VCE(sat)= -1.0(V)(Max)@IC= -2A
- Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min)
APPLICATIONS
- Designed for low frequency power amplifier and power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -4 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak -8 A PC Total Power Dissipation @ TC=25℃ 40 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃
INCHANGE Semiconductor isc Product Specification isc Website：www.iscsemi.cn 2 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB565
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; RBE= ∞ -50 V V(BR)CBO Collector-Base Breakdown Voltage IC= -10μ A; IE= 0 -50 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -10μ A; IC= 0 -4 V VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A -1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -2A; IB= -0.2A -1.2 V ICBO Collector Cutoff Current VCB= -50V ; IE= 0 -1 μ A hFE-1 DC Current Gain IC= -1A; VCE= -4V 60 200 hFE-2 DC Current Gain IC= -0.1A; VCE= -4V 35 fT Current-Gain—Bandwidth Product IC= -0.5A; VCE= -4V 15 MHz Switching Times ton Turn-on Time VCC= -10.5V, IB1= -IB2= -50mA, IC= -0.5A 0.3 μ s tstg Storage Time 2.5 μ s toff Turn-off Time 3.0 μ s hFE-1 Classifications B C 60-120 100-200