2SB546A_2014 JMNIC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 4
Technical content
JMnic Product Specification Silicon PNP Power Transistors 2SB546A DESCRIPTION ·
- With TO-220C package
- Complement to type 2SD401A
- Collector current IC=-2A
- Collector-base voltage VCBO=-200V
APPLICATIONS
- For use in general purpose power amplifier,vertical output application PINNING PIN DESCRIPTION
1 Emitter
2 Collector;connected to
3 Base
Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -200 V VCEO Collector-emitter voltage Open base -150 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -2 A ICM Collector current-peak -3 A PT Total power dissipation T C=25℃ 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Fig.1 simplified outline (TO-220) and symbol
JMnic Product Specification Silicon PNP Power Transistors 2SB546A CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=-10mA; IB=0 -150 V V(BR)CBO Collector-base breakdown voltage I C=-0.5mA; IE=0 -200 V V(BR)EBO Emitter-base breakdown votage I E=-0.5mA; IB=0 -5 V VCEsat Collector-emitter saturation voltage I C=-500m A;IB=-50m A -1.0 V ICBO Collector cut-off current V CB=-150V; IE=0 -50 μA IEBO Emitter cut-off current V EB=-5V; IC=0 -50 μA hFE DC current gain I C=-0.4A ; VCE=-10V 40 240 fT Transition frequency I C=-0.4A ; VCE=-10V 5 MHz hFE classifications M L K 40-80 60-120 100-200
JMnic Product Specification Silicon PNP Power Transistors 2SB546A PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
JMnic Product Specification Silicon PNP Power Transistors 2SB546A