2SB546 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
, O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SB546
DESCRIPTION
- Collector-Emitter Breakdown Voltage- :V(BR)CEO=-150V(Min)
- Collector Power Dissipation- : Pc= 30W(Max)@ Tc= 25'C
- Complement to Type 2SD401
APPLICATIONS
- Designed for use in line-operated color TV vertical deflection of complementary symmetry circuit. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICM IBM PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Peak Total Power Dissipation @ TC=25'C Junction Temperature Storage Temperature Range VALUE -200 -150 -5.0 -1.5 150 -55-150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-c PARAMETER Thermal Resistance.Junction to Ambient Thermal Resistance.Junction to Case MAX 4.16 UNIT
- c/w "C/W w PIH: 1 Base
2 Collector
] ; 3 I«itter *" 3 TO-ZZOC package j *u? A ~ f f i B i» j/T^f it1- HjM K t J C 01. DIM A B C D F G H J K L R U V L D mm WIN 15.50 9.90 4.20 0.70 3.40 4.98 Z.E8 0.44 13. 1.10 2.70 2.30 1.29 6.45 8.66 MAX 15.90 10.20 4,50 0.90 3,70 5.18 2.90 0.60 13.40 1.45 2.90 2.70 1.35 6.65 8.86
- ^^^J *h j N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by N.I Semi-Conductors is believed to lie both accurate and reliable at the time of going to press. I kmever. N.I Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use." N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
Silicon PNP Power Transistor 2SB546
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified SYMBOL V(BR)CEO VcE(sat) ICBO IEBO PIPE ft COB PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain — Bandwidth Product Output Capacitance CONDITIONS lc=-10mA;lB=0 lc= -0.5A; IB= -50mA VCB=-150V;IE=0 VEB= -4V; lc= 0 lc=-0.4A;VCE=-10V IC=-0.4A;VCE=-10V |E=0;VCB=-lOV;f,est=1MHz MIN -150 TYP. MAX -2.0 -50 -50 UNIT V V MA MA MHz PF