2SB546 SAVANTIC

Document overview

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Technical content

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB546

DESCRIPTION

  • With TO-220C package
  • Complement to type 2SD401
  • Collector current IC=-2A
  • Collector-base voltage VCBO=-200V

APPLICATIONS

  • For use in general purpose power amplifier,vertical output application PINNING PIN DESCRIPTION

1 Emitter

2 Collector;connected to

3 Base

Absolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -200 V VCEO Collector-emitter voltage Open base -150 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -2 A PC Collector power dissipation T C=25 25 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-220) and symbol

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB546 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0 -150 V V(BR)CBO Collector-base breakdown voltage I C=-0.5mA; IE=0 -200 V V(BR)EBO Emitter-base breakdown votage I E=-0.5mA; IB=0 -5 V VCEsat Collector-emitter saturation voltage I C=-500m A;IB=-50m A -1.0 V ICBO Collector cut-off current V CB=-150V; IE=0 -50 µA IEBO Emitter cut-off current V EB=-5V; IC=0 -50 µA hFE DC current gain I C=-0.4A ; VCE=-10V 40 240 fT Transition frequency I C=-0.4A ; VCE=-10V 5 MHz hFE classifications R O Y 40-80 70-140 120-240

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB546 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB546