2SB536 JMNIC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
JMnic Product Specification Silicon PNP Power Transistors 2SB536 DESCRIPTION ·
- With TO-220C package
- Complement to type 2SD381
- Low collector saturation voltage
APPLICATIONS
- Audio frequency power amplifier
- Low speed power switching PINNING PIN DESCRIPTION
1 Emitter
2 Collector;connected to
3 Base
Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -130 V VCEO Collector-emitter voltage Open base -120 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -1.5 A ICM Collector current-peak -3.0 A IB Base current -0.3 A Ta=25℃ 1.5 PT Total power dissipation TC=25℃ 20 W Tj Junction temperature 150 ℃ Tstg Storage temperature -50~150 ℃ Fig.1 simplified outline (TO-220) and symbol
JMnic Product Specification Silicon PNP Power Transistors 2SB536 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=-10mA; IB=0 -120 V VCEsat Collector-emitter saturation voltage I C=-1A; IB=-0.1A -2.0 V VBEsat Base-emitter saturation voltage I C=-1A; IB=-0.1A -1.5 V ICBO Collector cut-off current V CB=-120V; IE=0 -1.0 μA IEBO Emitter cut-off current V EB=-3V; IC=0 -1.0 μA hFE-1 DC current gain I C=-5mA ; VCE=-5V 25 hFE-2 DC current gain I C=-0.3A ; VCE=-5V 40 250 COB Output capacitance I E=0 ; VCB=-10V; f=1MHz 35 pF fT Transition frequency I C=-0.1A ; VCE=-5V 40 MHz hFE-2 Classifications N M L K 40-80 60-120 80-160 120-250
JMnic Product Specification Silicon PNP Power Transistors 2SB536 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)