2SB536 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
, O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistors 2SB536
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.)
- Complement to Type 2SD381
APPLICATIONS
- Audio frequency power amplifier, low speed switching.
- Suitable for driver of 60-100 watts audio amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25°C) SYMBOL VCBO VCEO VEBO Ic ICM IB PG Tj Tsig PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation@Tc=25°C Collector Power Dissipation@Ta=250C Junction Temperature Storage Temperature VALUE -130 -120 -1.5 -3.0 -0.3 1.5 150 -55-150 UNIT V V V A A A W 1 -^ PIH: 1 Base 1 2 Collector ; 3 Emitter 1 ~ 3 TO-220C package A f # ^ B H 4-^rf't 4-4 •J K f ] c ! ft m A B C D F G H J K L Q R S U V mm WIN 15.50 9.90 4.20 0.70 3.40 4.98 2.68 0.44 13.00 1.10 2.70 2.30 1.29 6.45 8.66 MAX 15.90 10.20 4.50 0.90 3.70 5.18 2.90 0.60 13.40 1.45 2.90 2.70 1.35 6.65 8.86 «-$ «•[* J ? •*— NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of goinu to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verity that datasheets are current before placing orders. Quality Semi-Conductors
Silicon PNP Power Transistors 2SB536
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified SYMBOL VcE(sat) VsE(sat) ICBO IEBO hpE.i hFE-2 COB fy PARAMETER Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Output Capacitance Current-Gain — Bandwidth Product CONDITIONS lc=-1A; IB=-0.1A lc=-1A; IB=-0.1A VCB=-120V; IE=0 VEB= -3V; lc= 0 lc= -5mA ; VCE= -5V lc= -0.3A ; VCE= -5V lE=0;VCB=-10V;f-0.1MHz lc=-0.1A; VCE= -5V MIN TYP. MAX -2.0 -1.5 -1.0 -1.0 250 UNIT V V u A UA pF MHz
- hFE Classifications N 40-80 M 60-120 L 80-160 K 120-250