2SB526 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
l sii.s , U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SB526
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V(BR)CEo= -SOV(Min)
- Good Linearity of I>E
- Complement to Type 2SD356
APPLICATIONS
- Designed for AF high power dirver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation @ Ta=25'C Collector Power Dissipation @ T0=25°C Junction Temperature Storage Temperature Range VALUE -90 -80 -0.8 150 -55-150 UNIT V V V A W r w PIH: 1 Base 1 . 2 Collector ] ' 3 Emitter ' ^ 3 TO-2ZOC package 'if A I—-1
- ^ B H J-^rfl . \\ K T 1 H I ji3oD G -- c 1 1 A DIM A B C D F G H J K L Q R S U V mm WIN 15.50 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 Mi 8.66 MAX 15.90 10.20 450 0.90 3.70 5.18 2.90 0.60 13.40 1.30 2.90 2.70 1.35 6.65 8.86 — , NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is helieved to he both accurate and reliable at the time ot'going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Qualify Semi-Conductors
Silicon PNP Power Transistor 2SB526
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VcE(sat) VBE(on) ICEO IEBO hFE PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain CONDITIONS lc=-10mA; RBE= °° lc=-1mA; IE- 0 |E=-1mA;lc= 0 lc= -0.3A; IB= -30mA lc= -50mA; VCE= -4V VCE= -80V; RBE= °° VEB= -5V; lc= 0 lc= -0.3A; VCE= -4V MIN -80 -90 TYP. 0.7 MAX -1.0 -10 300 UNIT V V V V V mA MA Classifications c 55-110 D 90-180 E 150-300