2SB526 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc Silicon PNP Power Transistor 2SB526
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min)
- Good Linearity of hFE
- Complement to Type 2SD356
APPLICATIONS
- Designed for AF high power dirver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -90 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -0.8 A PC Collector Power Dissipation @ Ta=25℃ 1 W Collector Power Dissipation @ TC=25℃ 10 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistor 2SB526
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; RBE= ∞ -80 V V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 -90 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -0.3A; IB= -30mA -1.0 V VBE(on) Base-Emitter On Voltage IC= -50mA; VCE= -4V 0.7 V ICEO Collector Cutoff Current VCE= -80V; RBE= ∞ -1 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -10 μ A hFE DC Current Gain IC= -0.3A; VCE= -4V 55 300 hFE Classifications C D E 55-110 90-180 150-300