2SB521 SAVANTIC
Document overview
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Technical content
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB521
DESCRIPTION
- With TO-220 package
- Low collector saturation voltage
APPLICATIONS
- High current switching applications PINNING PIN DESCRIPTION
1 Emitter
2 Collector;connected to
3 Base
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector- emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -8 V IC Collector current -5 A PT Total power dissipation T C=25 43 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-220) and symbol
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB521 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=-10mA , IB=0 -60 V V(BR)EBO Emitter-base breakdown voltage I E=-1mA , IC=0 -8 V VCEsat Collector-emitter saturation voltage I C=-3A; IB=-0.15A -0.4 V VBEsat Base-emitter saturation voltage I C=-3A; IB=-0.15A -1.2 V ICBO Collector cut-off current V CB=-50V; IE=0 -1 µA IEBO Emitter cut-off current V EB=-8V; IC=0 -1 µA hFE DC current gain I C=-2.5A ; VCE=-2V 50 fT Transition frequency I C=-0.2A ; VCE=-5V 7 MHz
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB521 PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)