2SB506 SAVANTIC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB506
DESCRIPTION
- With TO-3 package
- Wide area of safe operation
APPLICATIONS
- Low frequency power amplification
- Power switching application PINNING(see Fig.2) PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Absolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -150 V VCEO Collector-emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -5 A PC Collector power dissipation T C=25 60 W Tj Junction temperature 100 Tstg Storage temperature -55~100 Fig.1 simplified outline (TO-3) and symbol
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB506 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP . MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=-10mA; IB=0 -100 V V(BR)EBO Emitter-base breakdown voltage I E=-1mA; IC=0 -7 V VCEsat Collector-emitter saturation voltage I C=-5A; IB=-0.5A -1.0 V VBEsat Base-emitter saturation voltage I C=-5A; IB=-0.5A -1.5 V ICBO Collector cut-off current V CB=-100V; IE=0 -0.1 mA IEBO Emitter cut-off current V EB=-7V; IC=0 -0.1 mA hFE DC current gain I C=-1A ; VCE=-5V 35 200 fT Transition frequency I C=-0.3A ; VCE=-10V 20 MHz
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB506 PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm)