2SB502 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistors TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SB502
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V(BR)CEO= -SOV(Min)
- High Power Dissipation- : Pc=25W(Max)@Tc=25°C
APPLICATIONS
- Designed for audio power amplifier and regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25°C) SYMBOL VCBO VCEO VEBO Ic IE PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Emitter Current-Continuous Collector Power Dissipation @Ta=25'C Collector Power Dissipation @TC=25"C Junction Temperature Storage Temperature VALUE -110 -80 1.5 150 -65-150 UNIT V V V A A W PIN 1.BASE 2. EMITTER 3. COLLECTOR (CASE) TO-66 package DIM A B D H K L N Q U v nun MIH 31.40 17.30 6.70 0.70 1.40 T«AX 31.80 17.70 7.10 0.90 1.60 5.08 2.54 9.80 14.70 12.40 3.60 24.30 3.50 10.20 14.90 12.60 3.80 24.50 3,70 N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is helieved to be both accurate and reliable at the time of going to press. I lowevcr. NJ Semi-Conduetors assumes no responsibility for any errors or omissions discovered in its use. ' NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
Silicon PNP Power Transistors 2SB502
ELECTRICAL CHARACTERISTICS
Tj=25"C unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VcE(sat) VeE(sat) ICBO IEBO hpE-1 flFE-2 COB PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Output Capacitance CONDITIONS lc=-0.1A; IB=0 lc= -2mA; IE= 0 !E=-10mA; lc=0 lc= -3A; IB= -0.3A lc= -3A; IB= -0.3A VCB= -50V; IE= 0 VEB= -8V; lc= 0 lc= -0.5A; VCE= -5V lc= -2.5A; VCE= -5V le=0;VCB=-10V;f= 1MHz MIN -80 -110 TYP. 200 MAX -1.5 -1.8 -10 -100 280 UNIT V V V V V MA U A PF hFE Classifications R 30-70 50-140 Y 100-280