2SB502 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors 2SB502
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min)
- High Power Dissipation- : PC= 25W(Max)@TC=25℃
APPLICATIONS
- Designed for audio power amplifier and regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -110 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous -3 A IE Emitter Current-Continuous 3 A PC Collector Power Dissipation @Ta=25℃ 1.5 W Collector Power Dissipation @TC=25℃ 25 TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors 2SB502
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -0.1A; IB= 0 -80 V V(BR)CBO Collector-Base Breakdown Voltage IC= -2mA; IE= 0 -110 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -10mA; IC= 0 -8 V VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A -1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -3A; IB= -0.3A -1.8 V ICBO Collector Cutoff Current VCB= -50V; IE= 0 -10 μ A IEBO Emitter Cutoff Current VEB= -8V; IC= 0 -100 μ A hFE-1 DC Current Gain IC= -0.5A; VCE= -5V 30 280 hFE-2 DC Current Gain IC= -2.5A; VCE= -5V 15 COB Output Capacitance IE= 0; VCB= -10V; f= 1MHz 200 pF hFE Classifications R O Y 30-70 50-140 100-280