2SB337 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
, O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistors 2SB337
DESCRIPTION
- Low Collector Saturation Voltage- : VCE(sat)= -0.29V(Typ.) @|e= -4A
- High Power Dissipation
APPLICATIONS
- Designed for audio frequency power output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25"C) SYMBOL VCBO VCER VEBO Ic IE IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Emitter Current-Continuous Base Current-Continuous Collector Power Dissipation Junction Temperature Storage Temperature VALUE -40 -30 -10 100 -55-100 UNIT V V V A A A W
- -< X PIN l.Base 2. Emitter J.Collestor(case) i ! (— — * HS T KC DIM D H K L H _Ji— u V N 1 — i ! c i j IU-DJPL L« ll^l /-s L'x / i L/ t nun MM MAX 3900 25.30 26.67 7.80 8,50 0.90 1.10 t .40 1 .60 1092 546 1UO_ 1350 1675 1T.05 19.^0__ 19.62 4,00 420 30.00 30 20 430 450 B B N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by N.I Scmi-(_'onductors is believed to he both accurate and reliable at the time of going In press. I lowever. N.I Semi-Conductors assumes no responsihilih for any errors or omissions discovered in its use. ^J Semi-C onduciors encourages customers to verify thai datasheets are current before placing orders. Qualify Semi-Conductors
Silicon PNP Power Transistors 2SB337
ELECTRICAL CHARACTERISTICS
Tj=25'C unless otherwise specified SYMBOL V(BR)CER VcE(sat) VsE(on) ICBO hFE PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current DC Current Gain CONDITIONS IC=-0.6A (peak) ; RBE=68Q lc= -4A; IB= -0.4A IC=-1A;VCE=-2V VCB= -30V; IE= 0 IG=-1A;VGE=-2V MIN -30 TYP. -0.29 -0.38 MAX -1.0 165 UNIT V V V mA hFE Classifications A 50-100 B 80-165