2SB337 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SB337
DESCRIPTION
- Low Collector Saturation Voltage- : V CE(sat)= -0.29V(Typ.) @IC= -4A
- High Power Dissipation- : PC= 30W(Max)@TC=55℃
APPLICATIONS
- Designed for audio frequency power output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCER Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -10 V IC Collector Current-Continuous -7 A IE Emitter Current-Continuous 7 A IB B Base Current-Continuous -1 A PC Collector Power Dissipation @TC=55℃ 30 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SB337
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CER Collector-Emitter Breakdown Voltage IC= -0.6A; RBE= 68Ω -30 V VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A B 0.29 V VBE(on) Base-Emitter On Voltage IC= -1A; VCE= -2V 0.38 V ICBO Collector Cutoff Current VCB= -30V; IE= 0 -1.0 mA hFE DC Current Gain IC= -1A; VCE= -2V 50 165 hFE Classifications A B 50-100 80-165 isc Website：www.iscsemi.cn