2SB1739 SANYO

Document overview

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Technical content

Features

  • Low saturation voltage.
  • Contains diode between collector and emitter.
  • Contains bias resistance between base and emitter.
  • Large current capacity. Specifications ( ) : 2SB1739 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO (- -)40 V Collector-to-Emitter Voltage V CEO (- -)30 V Emitter-to-Base Voltage V EBO (- -)6 V Collector Current I C (- -)3 A Collector Current (Pulse) I CP (- -)5 A Collector Dissipation P C Tc=25°C1 5 W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current I CBO VCB =(- -)30V, IE=0A (- -)1.0 µA DC Current Gain hFE 1V CE =(- -)2V, IC =(- -)0.5A 70 hFE 2V CE =(- -)2V, IC =(- -)2A 50 Gain-Bandwidth Product f T VCE =(- -)2V, IC =(- -)0.5A 100 MHz Output Capacitance Cob V CB =(- -)10V, f=1MHz (55)40 pF Collector-to-Emitter Saturation Voltage VCE (sat) I C =(- -)2A, IB=(- -)100mA (- -0.28)0.23(- -0.6)0.5 V Base-to-Emitterr Saturation Voltage V BE (sat) I C =(- -)2A, IB=(- -)100mA (- -)1.5 V Collector-to-Base Breakdown Voltage V (BR)CBO IC =(- -)10µA, IE=0A (- -)40 V Collector-to-Emitter Breakdown Voltage V(BR)CEO 1I C =(- -)10µA, RBE =∞ (- -)40 V V(BR)CEO 2I C =(- -)10mA, RBE =∞ (- -)30 V Diode Forwad Voltage V F IF=(- -)0.5A (- -)1.5 V Base-to-Emitter Resistance R BE 0.8 k Ω TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

83006 MS IM / 72006EA MS IM TC-00000064

Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. SANYO Semiconductors DATA SHEET 2SB1739 / 2SD2720 PNP / NPN Epitaxial Planar Silicon Transistors Compact Motor Driver

Applications

No. A0437-2/5 Package Dimensions Package Dimensions unit : mm (typ) unit : mm (typ) 7518-003 7003-003 Electrical Connection 6.5 5.0 2.3 0.5 0.85 0.7 1.2 0.6 0.5 2.3 2.3 7.07.5 1.6 0.8 5.5 1.5 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP IC -- VCE IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A IC -- VCE IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A IT11149 IT11151 --0.4 --0.2 --0.6 --0.8 --1.0 --0.3 --0.1 --0.5 --0.7 --0.9 --1mA --2mA --2mA --4mA --6mA --8mA --10mA --20mA --12mA --14mA --16mA --18mA --3mA --4mA --5mA --6mA --7mA --8mA --9mA --10mA --0.5 --2.5 --2.0 --1.5 --1.0 --3.0 2SD2720 2SD2720 2SB1739 2SB1739 IB =0mA IB =0mA IT11152 024 8 61 0 2mA 4mA 6mA 8mA 10mA 20mA 12mA 14mA 16mA 18mA 0.5 2.5 2.0 1.5 1.0 3.0 IB =0mA IB =0mA IT11150 0.4 0.2 0.6 0.8 1.0 0.3 0.1 0.5 0.7 0.9 1mA 2mA 3mA 4mA 5mA 6mA 7mA8mA 9mA 10mA 6.5 5.0 2.3 0.5 0.85 0.6 0.5 1.2 1.2 2.3 2.3 7.02.5 5.5 1.5 0.8 0 to 0.2 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA R BE 2SB1739 2SD2720 Collector Emitter Base R BE Collector Emitter Base

No. A0437-3/5 hFE -- IC hFE -- IC Collector Current, IC -- A DC Current Gain, hFE Collector Current, IC -- A DC Current Gain, hFE VCE (sat) -- ICVCE (sat) -- IC Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE (sat) -- V Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE (sat) -- V VBE (sat) -- IC VBE (sat) -- IC Collector Current, IC -- A Collector Current, IC -- A Base-to-Emitter Saturation V oltage, VBE (sat) -- V Base-to-Emitter Saturation V oltage, VBE (sat) -- V IC -- VBEIC -- VBE Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A --0.1 --1.0 100 2SB1739 V CE = --2V Ta=75 25°C --25 Ta=75 25°C --25 2SB1739 IC / IB =20 2SB1739 IC / IB =20 Ta= --25°C 75°C 25°C --2.5 --2.0 --3.0 --1.5 --1.0 --0.5 2.5 2.0 3.0 1.5 1.0 0.5 2SB1739 V CE = --2V Ta= --25 IT11153 57 723 23 23 55 1.00.10.01 100 2SD2720 V CE =2V Ta=75 25°C --25 2SD2720 V CE =2V Ta= --25 IT11154 IT11155 IT11157 IT11159 IT11156 0.1 7 1.025 5 32 3 0.1 0.1 1.0 27 5532 3 1.0 Ta=75 25°C --25°C 2SD2720 IC / IB =20 2SD2720 IC / IB =20 Ta= --25°C 75°C 25°C IT11158 IT11160

No. A0437-4/5 VCE (sat) -- IB VCE (sat) -- IB Cob -- VCB fT -- IC Collector-to-Emitter Saturation V oltage, VCE (sat) -- V Collector-to-Emitter Saturation V oltage, VCE (sat) -- V Output Capacitance, Cob -- pFGain-Bandwidth Product, fT -- MHz Base Current, IB -- A Base Current, IB -- A VCE (sat) -- IB VCE (sat) -- IB Collector-to-Emitter Saturation V oltage, VCE (sat) -- V Collector-to-Emitter Saturation V oltage, VCE (sat) -- V Base Current, IB -- A Base Current, IB -- A Collector-to-Base V oltage, VCB -- V Collector Current, IC -- A Cob -- VCB fT -- IC Output Capacitance, Cob -- pFGain-Bandwidth Product, fT -- MHz Collector-to-Base V oltage, VCB -- V Collector Current, IC -- A 100 --0.1 7 --1.025 53725 32 3 --0.1 Ta=75°C 25°C --25°C 2SB1739 IC = --2A IT11161 --0.1 --1.0 2SB1739 2SB1739 f=1MHz IT11163 IT11165 100 IT11167 1.00.1 7532 1075325 32 100 2SD2720 f=1MHz IT11166 0.10.01 7532 1.075325 32 100 IT11168 IC = --2A --1A --0.5A 0.1 7 1.025 53725 32 3 0.1 Ta=75°C 25°C --25°C 2SD2720 IC =2A 2SB1739 V CE = --2V 2SD2720 V CE =2V IT11162 0.1 7 1.025 370.0172 553 2 3 0.1 1.0 2SD2720 IT11164 IC =2A 0.5A

No. A0437-5/5 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. PS A S O PC -- Ta Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Ambient Temperature, Ta -- °C Collector Dissipation, PC -- W PC -- Tc Case Temperature, Tc -- °C Collector Dissipation, PC -- W 1ms DC operation, P C =1W ( No heat sink 10ms 100ms IC =3A 1.00.1 57325 325732 10 0.1 1.0 0.01 0 20 40 60 80 100 120 140 160 0.8 0.6 0.4 0.2 0.7 0.5 0.3 0.1 1.1 1.0 0.9 0 20 40 60 80 100 120 140 160 2SB1739 / 2SD2720 2SB1739 / 2SD2720 IT11169 IT11171 IT11170 ICP =5A 2SB1739 / 2SD2720 Ta=25°C Single Pulse Mounted on a ceramic board (250mm 25 0.8mm) For PNP minus sign is omitted. No heat sink This catalog provides information as of August, 2006. Specifications and information herein are subject to change without notice.