2SB1700 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
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Technical content

Features

  • High DC current gain.
  • Large current capacity and wide ASO.
  • Micaless package facilitating mounting. ( ) : 2SB1700 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO (- -)110 V Collector-to-Emitter Voltage V CEO (- -)100 V Emitter-to-Base Voltage V EBO (- -)6 V Collector Current I C (- -)3 A Collector Current (Pulse) I CP (- -)5 A Collector Dissipation P C 1.5 W Tc=25°C1 0 W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current I CBO VCB =(- -)80V, IE=0 (- -)0.1 mA Emitter Cutoff Current I EBO VEB =(- -)5V, IC =0 (- -)3.0 mA Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 2SB1700 / 2SD2663 Package Dimensions unit : mm 2042B [2SB1700 / 2SD2663] O1003 TS IM TA-100279, 100280 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. PNP/NPN Epitaxial Planar Silicon Darlington Transistors 1 : Emitter 2 : Collector 3 : Base SANYO : TO-126ML 4.0 1.01.0 8.0 1.6 0.8 0.8 0.75 1.5 7.53.0 1.4 11.015.5 3.3 3.0 0.7 2.4 4.8 1.7 1 2 3

No.7380-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit DC Current Gain h FE VCE =(- -)3V, IC =(- -)1.5A 1500 4000 Gain-Bandwidth Product f T VCE =(- -)5V, IC =(- -)1.5A 20 MHz Collector-to-Emitter Saturation Voltage VCE (sat) I C =(- -)1.5A, IB=(- -)3mA (- -1.0)0.9 (- -)1.5 V Base-to-Emitter Saturation Voltage V BE (sat) I C =(- -)1.5A, IB=(- -)3mA (- -)2.0 V Collector-to-Base Breakdown Voltage V (BR)CBO IC =(- -)5mA, IE=0 (- -)110 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC =(- -)50mA, RBE =∞ (- -)100 V Turn-ON Time t on See specified Test Circuit. (0.8)0.7 µs Storage Time t stg See specified Test Circuit. (2.4)5.0 µs Fall Time t f See specified Test Circuit. 1.2 µs Specified Test Circuit (For PNP, the polarity is reversed.) Electrical Connection VBE = --5V V CC =50V INPUT OUTPUT 100µF 470 µF 50Ω R B R L 50Ω VR PW=50 µs, Duty Cycle≤1% 500IB1 = --500IB2 =IC =1A TUT 6kΩ 200Ω 2SB1700 C E B 6kΩ 200Ω 2SD2663 C E B IC -- VCE --0.5 --1.0 --1.5 --2.0 --2.5 IT04729 2SB1700 IB =0 --150µA --250µA --200µA IC -- VCE --1 --2 --3 --4 --5 --6 IT04731 IB =0 IT04732 --1.0mA 02 1 3456789 1 0 IC -- VCE IB =0 1.0mA 1.5mA IC -- VCE 0.5 1.0 1.5 2.0 2.5 IT04730 02 1 3456789 1 0 IB =0 150µA 200µA 250µA 300µA 350µA 400µA 450µA 500µA 2SB1700 2SD2663 2SD2663From top --5.0mA --4.5mA --4.0mA --3.5mA --3.0mA --2.5mA --2.0mA From top 5.0mA 4.5mA 4.0mA 3.5mA 3.0mA 2.5mA 2.0mA --1.5mA --300µA --350µA --400µA --500µA --450µA Collector-to-Emitter V oltage, VCE -- V Collecotr Current, IC -- A Collector-to-Emitter V oltage, VCE -- V Collecotr Current, IC -- A Collector-to-Emitter V oltage, VCE -- V Collecotr Current, IC -- A Collector-to-Emitter V oltage, VCE -- V Collecotr Current, IC -- A

No.7380-3/4 1.0 --1000--100 23 7 52 3 5 --1.0 --1000--100 23 7 52 3 5 --1.0 1000100 23 7 52 3 5 1000100 23 7 52 3 5 1000 10000 hFE -- IC Ta=120 25°C --40°C 1.0 0.5 2.0 3.0 1.5 2.5 3.5 IC -- VBE Ta=120 --40 --1.0 --2.0 --3.0 --3.5 --2.5 --1.5 --0.5 --1000--100 23 7 52 3 5 1000 10000 hFE -- IC IT04735 VCE (sat) -- IC IT04737 IT04736 IT04738 IC -- VBE IT04733 IT04734 2SD2663 IC / IB =500 2SB1700 IC / IB =500 Ta=120 --40 Ta=120 25°C --40°C VBE (sat) -- IC IT04739 VBE (sat) -- IC IT04740 Ta= --40°C 25°C 120°C Ta= --40°C 25°C 120°C Ta= --40°C 25°C 120°C 2SD2663 V CE =3V 1.0 VCE (sat) -- IC 1000100 23 7 53 5 2SB1700 V CE = --3V 2SD2663 V CE =3V 2SB1700 V CE = --3V 2SD2663 IC / IB =500 2SB1700 IC / IB =500 Ta= --40°C 25°C 120°C Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A Collector Current, IC -- mA DC Current Gain, hFE Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A Collector Current, IC -- mA DC Current Gain, hFE Collector Current, IC -- mA Collector-to-Emitter Saturation V oltage, VCE (sat) -- V Collector Current, IC -- mA Base-to-Emitter Saturation V oltage, VBE (sat) -- V Collector Current, IC -- mA Collector-to-Emitter Saturation V oltage, VCE (sat) -- V Collector Current, IC -- mA Base-to-Emitter Saturation V oltage, VBE (sat) -- V

No.7380-4/4 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of October, 2003. Specifications and information herein are subject to change without notice. PS 0.1 23 5 7 1.0 23 5 7 10 23 5 7 100 2 0.01 0.1 1.0 A S O IT04741 PC -- Ta IT04742 0 20 40 60 80 100 120 140 160 0.5 1.0 1.5 2.0 2SB1700 / 2SD26632SB1700 / 2SD2663ICP =5A IC =3A DC operation Ta=25°C 100ms 10ms1ms 100 µs Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Ambient Temperature, Ta -- °C Collector Dissipation, PC -- W PC -- Tc IT05888 0 20 40 60 80 100 120 140 160 2SB1700 / 2SD2663 Case Temperature, Tc -- °C Collector Dissipation, PC -- W 100µs to 100ms : Single pulse For PNP, minus sign is omitted DC operation Tc=25°C