2SB1683

2SD2639 SANYO

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 4

Technical content

Features

• Wide ASO because of on-chip ballast resistance.
• Good dependence of fT on current and good HF characteristic. Specifications ( ) : 2SB1683 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO (- -)160 V Collector-to-Emitter Voltage V CEO (- -)140 V Emitter-to-Base Voltage V EBO (- -)6 V Collector Current I C (- -)12 A Collector Current (Pulse) I CP (- -)15 A Collector Dissipation P C Tc=25°C8 0 W Junction Temperature Tj 150 °C Storage Temperature Tstg - -40 to +150°C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current I CBO VCB =(- -)80V, IE=0 (- -)0.1 mA Emitter Cutoff Current I EBO VEB =(- -)4V, IC =0 (- -)0.1 mA Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Package Dimensions unit : mm 2010C [2SB1683 / 2SD2639]

62501 TS IM TA-3139, 3140

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. 10.2 5.13.618.0 5.6 2.7 6.315.1 1.2 14.0 0.8 1.34.5 0.4 2.552.55 2.7 123 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220 2SB1683 / 2SD2639 140V / 12A, AF 60W Output Applications 2SB1683 : PNP Epitaxial Planar Silicon Transistor 2SD2639 : NPN Triple Diffused Planar Silicon Transistor

No.6960-2/4 Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A IC -- VCE Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A IC -- VBE Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A IC -- VBE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A IC -- VCE --2 --6 --4 --8 --10 IT03152 --2 --1 --3 --4 --5 --6 --7 IT03154 IT03155 IT03153 --240mA--200mA --160mA --120mA --40mA --20mA --80mA 2SB1683 IB =0 10 20 30 40 240mA160mA 200mA 120mA 80mA 40mA 20mA 2SB1683 V CE = --5V 2SD2639 V CE =5V 2SD2639 R B VCC =20V VBE =--2V (For PNP , the polarity is reversed) 51Ω Input Output PW=20 µs D.C.≤1% R L 20Ω 1µF1 µF IB1 IB2 VR 200Ω 10IB1= --10IB2=IC =1A Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit DC Current Gain hFE 1V CE =(- -)5V, IC =(- -)1A 60* 200* hFE 2V CE =(- -)5V, IC =(- -)6A 20 Gain-Bandwidth Product f T VCE =(- -)5V, IC =(- -)1A 15 MHz Output Capacitance Cob V CB =(- -)10V, f=1MHz (300)210 pF Base-to-Emitter Saturation Voltage V BE VCE =(- -)5V, IC =(- -)1A 1.5 V Collector-to-Emitter Saturation Voltage VCE (sat) I C =(- -)5A, IB=(- -)0.5A (1.1)0.6 2.5 V Collector-to-Base Breakdown Voltage V (BR)CBO IC =(- -)5mA, IE=0 (- -)160 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC =(- -)5mA, RBE =∞ (- -)140 V IC =(- -)50mA, RBE =∞ (- -)140 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=(- -)5mA, IC =0 (- -)6 V Turn-ON Time t on See specified test circuit. (0.25)0.26 µs Fall Time t f See specified test circuit. (0.53)0.68 µs Storage Time t stg See specified test circuit. (1.61)6.88 µs * : The 2SB1683 / 2SD2639 are classified by 1A hFE as follows : Rank D E hFE 60 to 120 100 to 200 Switching Time Test Circuit

No.6960-3/4 IT03160 IT03162 100 1000 --10--1.0 --10023 5 7 23 5 7 2SB1683 f=1MHz IT03161 100 1000 101.0 100 23 5 7 23 5 7 2SD2639 f=1MHz IT03163 0.1 1.0 0.1 1.0 1.00.1 23 5 7 1023 5 7 100 1000 IT03158 0.1 1.0 1023 5 7 23 5 7 2 100 1000 IT03159 2SD2639 V CE =5V 2SB1683 V CE = --5V IT03156 1.0 2SB1683 V CE = --5V IT03157 1.0 1.00.1 23 5 7 1023 5 7 2SD2639 V CE =5V 2SB1683 IC / IB =10 2SD2639 IC / IB =10 Collector-to-Base V oltage, VCB -- V Cob -- VCB Output Capacitance, Cob -- pF Collector Current, IC -- A VCE (sat) -- IC Collector-to-Base V oltage, VCB -- V Cob -- VCB Output Capacitance, Cob -- pF Collector Current, IC -- A VCE (sat) -- IC fT -- IC Collector Current, IC -- A Gain-Bandwidth Product, fT -- MHz fT -- IC Collector Current, IC -- A Gain-Bandwidth Product, fT -- MHz Collector Current, IC -- A hFE -- IC DC Current Gain, hFE Collector Current, IC -- A hFE -- IC DC Current Gain, hFE Collector-to-Emitter Saturation V oltage, VCE (sat) -- V Collector-to-Emitter Saturation V oltage, VCE (sat) -- V

No.6960-4/4 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2001. Specifications and information herein are subject to change without notice. PS Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V Forward Bias A S O Collector Current, IC -- A VBE (sat) -- IC Collector Current, IC -- A VBE (sat) -- IC --1.0 --10 IT03164 1.0 1.00.1 23 5 7 1023 5 7 IT03165 2SD1683 IC / IB =10 2SD2639 IC / IB =10 IT03166 0.1 1.0 101.0 23 5 7 100 2323 5 7 10ms 1ms 100msDC operation 2SB1683 / 2SD2639 Tc=25°C Single pulse For PNP, minus sign is omitted ICP =15A IC =12A IT03168 120 100 00 20 40 60 80 100 120 140 160 2SB1683 / 2SD2639 Case Temperature, Tc -- °C PC -- Tc Collector Dissipation, PC -- W Base-to-Emitter Saturation V oltage, VBE (sat) -- V Base-to-Emitter Saturation V oltage, VBE (sat) -- V