2SB1679 PANASONIC

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Technical content

Silicon PNP epitaxial planer type For low-frequency amplification I Features

  • Large current capacitance
  • Low collector to emitter saturation voltage
  • Small type package, allowing downsizing and thinning of the equipment. I Absolute Maximum Ratings Ta = 25°C 1: Base 2: Emitter 3: Collector EIAJ: SC-70 S-Mini Type Package (3-pin) Unit: mm Parameter Symbol Rating Unit Collector to base voltage V CBO −15 V Collector to emitter voltage V CEO −10 V Emitter to base voltage V EBO −7V Peak collector current I CP − 0.5 A Collector current I C −1A Collector power dissipation P C 150 mW Junction temperature T j 150 °C Storage temperature T stg −55 to +150 °C 2.1±0.1 1.3±0.1 0.3+0.1 –0.0 2.0±0.2 1.25±0.10 (0.425) (0.65) (0.65) 0.2±0.1 0.9±0.10 to 0.1 0.9+0.2 –0.1 0.15+0.10 –0.05 10° Marking Symbol: 3V Parameter Symbol Conditions Min Typ Max Unit Collector cutoff current I CBO VCB = −10 V, IE = 0 −100 nA Collector to base voltage V CBO IC = −10 µA, IE = 0 −15 V Collector to emitter voltage V CEO IC = −1 mA, IB = 0 −10 V Emitter to base voltage V EBO IE = −10 µA, IC = 0 −7V Forward current transfer ratio *1 hFE1 *2 VCE = −2 V, IC = − 0.5 A 130 350 hFE2 VCE = −2 V, IC = −1 A 60 Collector to emitter saturation voltage *1 VCE(sat) IC = − 0.4 A, IB = −8 mA − 0.16 − 0.3 V Base to emitter saturation voltage *1 VBE(sat) IC = − 0.4 A, IB = −8 mA − 0.8 −1.2 V Transition frequency f T VCB = −10 V, IE = 50 mA, f = 200 MHz 130 MHz Collector output capacitance C ob VCB = −10 V, IE = 0, f = 1 MHz 22 pF I Electrical Characteristics Ta = 25°C ± 3°C Rank R S hFE1 130 to 220 180 to 350 Note) *1: Pulse measurement *2: Rank classification