2SB1667_15 KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
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Technical content

www.kexin.com.cn 1 Transistors PNP Transistors 2SB1667 ■ Features

  • Low saturation voltage
  • Audio Frequency Power Amplifier Applications ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -60 Emitter - Base Voltage VEBO -7 Collector Current - Continuous IC -3 Base current IB -0.5 Collector Power Dissipation Tc = 25°C 25 Ta = 25°C 1.5 Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V A PC W ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -60 Collector- emitter breakdown voltage VCEO Ic= -5 mA， IB=0 -60 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -7 Collector-base cut-off current ICBO VCB= -60 V , IE=0 -100 Emitter cut-off current IEBO VEB= -7V , IC=0 -100 Collector-emitter saturation voltage VCE(sat) IC=-3 A, IB=-300mA -0.5 -1.7 Base - emitter saturation voltage VBE(sat) IC=-3 A, IB=-300mA -1.2 Base - emitter voltage VBE VCE= -5V, IC= -500mA -0.7 -1 hFE(1) VCE= -5V, IC= -500mA 60 300 hFE(2) VCE=- 5V, IC= -3 A 20 Turn-on time ton 0.4 Storage time tstg 1.7 Fall time tf 0.5 Collector output capacitance Cob VCB= -10V, IE= 0,f=1MHz pF Transition frequency fT VCE= -5V, IC= -500mA MHz See specified Test Circuit us DC current gain V nA V 2.3 0.60+ 0.1 - 0.1 6.50+0.15 -0.15 1.50 +0.15 -0.15 0.80+0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.152.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3.80 TO-252 Unit: mm

1 Base

2 Collector

3 Emitter

■ Classification of hfe(1) Type 2SB1667-O 2SB1667-Y 2SB1667-GR Range 60-120 100-200 150-300 150

www.kexin.com.cn2 Transistors PNP Transistors 2SB1667 Switching Time Test Circuit IB1 = 0.2 A,IB2 = 0.2 A, duty cycle ≤ 1% IB1 20 μs VCC = −30 V Output 15 Ω IB2 IB1InputIB2 ■ Typical Characterisitics Collector-emitter voltage VCE (V) IC – VCE Collector current IC (A) Collector current IC (A) hFE – IC DC current gain hFE Collector current IC (A) VCE (sat) – IC Collector-emitter saturation voltage VCE (sat) (V) Base-emitter voltage VBE (V) IC – VBE Collector current IC (A) −20 −30 −60 IB = −10 mA −40 −50 −70 −80 Common emitter Tc = 25°C 1000 −0.02 300 100 −0.1 −3 Tc = 100°C −25 Common emitter VCE = −5V 500 −0.3 −1 −0.02 −0.3 −0.1 −0.02 −0.1 −1 −5 Tc = 100°C −25 Common emitter IC/IB = 10 −0.05 −0.5 −0.3 −3 −3.0 −2.0 −1.0 −0.8 −1.2 −1.6−0.4 Common emitter VCE = −5 V Tc = 100°C −25

www.kexin.com.cn 3 Tran sistors PNP Transistors 2SB1667 ■ Typical Characterisitics rth – tw Transient thermal resistance rth (°C/W) Pulse width tw (s) 0.001 0.01 0.1 1 10 100 1000 100 Curves should be applied in thermal limited area. (Single nonrepetitive pulse) No heat sink Infinite heat sink Ambient temperature Ta (°C) PC – Ta Collector power dissipation PC (W) Collector-emitter voltage VCE (V) Safe operation area Collector current IC (A) 0 50 100 150 200 Infinite heat sink No heat sink 0.1 1 10 100 IC max (continous) IC max (pulse)* 1 ms* 10 ms* 100 ms* 1 s* DC operation Tc = 25°C *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature.