2SB1664 SANYO

Document overview

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Technical content

Features

  • High DC current gain.
  • Large current capacity and wide ASO.
  • Low saturation voltage. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO -- 11 0 V Collector-to-Emitter Voltage V CEO - -100 V Emitter-to-Base Voltage V EBO -- 6 V Collector Current I C -- 8 A Collector Current (Pulse) I CP - -12 A Collector Dissipation P C Tc=25°C3 5 W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current I CBO VCB =- -80V, IE=0A - -0.1 mA Emitter Cutoff Current I EBO VEB =- -5V, IC =0A - -3.0 mA DC Current Gain h FE VCE =- -3V, IC =- -4A 1500 4000 Gain-Bandwidth Product f T VCE =- -5V, IC =- -4A 20 MHz Collector-to-Emitter Saturation Voltage VCE (sat) I C =- -4A, IB=- -8mA - -1.0 - -1.5 V Base-to-Emitter Saturation Voltage V BE (sat) I C =- -4A, IB=- -8mA - -2.0 V Collector-to-Base Breakdown Voltage V (BR)CBO IC =- -5mA, IE=0A - -110 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC =- -50mA, RBE =∞ - -100 V Turn-ON Time t on See specified Test Circuit. 0.7 µs Storage Time t stg See specified Test Circuit. 1.4 µs Fall Time t f See specified Test Circuit. 1.5 µs SANYO Semiconductors DATA SHEET TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 73106IA MS IM TA-1083 Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. 2SB1664 PNP Epitaxial Planar Silicon Darlington Transistor Driver Applications

No.8528-2/4 Package Dimensions Electrical Connection unit : mm (typ) 7002-003 Switching Time Test Circuit 6.2 7.8 8.2 0.2 0.44.2 1.0 1.0 5.08 2.542.54 8.4 10.0 1.2 0.3 0.6 0.6 0.7 7.8 5.2 6.210.0 6.0 2.5 1 2 1 : Base 2 : Emitter 3 : Collector SANYO : ZP IC -- VCE IT03423 IT03424 --10 --8 --6 --4 --2 IC -- VCE --6 --4 --2 --2mA --4mA --6mA --8mA IB =0mA IB =0µA --200µA --400µA --600µA --800µA --1000µA --2000µA --1200µA --1400 µA --1600µA --1800µA Collector-to-Emitter V oltage, VCE -- V Collecotr Current, IC -- A Collector-to-Emitter V oltage, VCE -- V Collecotr Current, IC -- A From top --18mA --16mA --14mA --12mA --10mA VBE = --5V V CC =50V INPUT OUTPUT 100µF 470 µF 50Ω 12.5Ω R B R LVR PW=50 µs, Duty Cycle≤1% 500IB1 = --500IB2 =IC =4mA TUT 200Ω6kΩ B C E

No.8528-3/4 IT03427 IT03429 IT03428 IT03430 VC E(sat) -- IC --0.1 --10 --1.0 2 3 5 7 --1.0 2 3 5 7 --10 A S O --1.0 --10 --0.1 3 5 7 --10 2 3 5 7 2--100 VBE(sat) -- IC --0.1 --1.0 2 3 5 7 --1.0 2 3 5 7 --10 PC -- Tc 20 40 60 80 100 120 140 160 IC / IB =500 Ta= --40°C 25°C 25°C 120°C 120°C IC / IB =500 Ta= --40°C Tc=25°C IC = --8A 1ms10ms IC P= --12A DC operation 100m s 1m s to 100m s : Single pulse C ollector-to-Em itter Voltage, V C E -- V C ollector C urrent, IC -- A C ase Tem perature, Tc -- °C C ollector D issipation, PC -- W C ollector C urrent, IC -- A C ollector-to-Em itter Saturation Voltage, V C E(sat) -- V C ollector C urrent, IC -- A B ase-to-Em itter Saturation Voltage, V B E(sat) -- V IT03425 IT03426 IC -- VBE--8 --6 --4 --2 hFE -- IC --0.1 10000 1000 2 3 5 7 --1.0 --102 3 5 7 V C E= --3V Ta=120°C 25°C --40°C Ta=120°C 25°C --40°C B ase-to-Em itter Voltage, V B E -- V C ollector C urrent, IC -- A C ollector C urrent, IC -- A D C C urrent G ain, hFE

No.8528-4/4PS Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2006. Specifications and information herein are subject to change without notice.