2SB1659 SANKEN
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*hFE Rank O(5000to12000), P(6500to20000), Y(15000to30000) Darlington 2SB1659 Silicon PNP Epitaxial Planar Transistor(Complement to type 2SD2589) Application : Audio, Series Regulator and General Purpose Symbol VCBO VCEO VEBO IC IB PC Tj T stg 2SB1659 –110 –110 50(Tc=25°C) 150 –55 to +150 Unit V V V A A W n Absolute maximum ratings n Electrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB 2SB1659 –100max –100max –110min 5000min* –2.5max –3.0max 100typ 110typ Unit mA mA V V V MHz pF Conditions VCB=–110V VEB=–5V IC=–30mA VCE=–4V, IC=–5A IC=–5A, IB=–5mA IC=–5A, IB=–5mA VCE=–12V, IE=0.5A VCB=–10V, f=1MHz (Ta=25°C) (Ta=25°C) n Typical Switching Characteristics (Common Emitter) VCC (V) –30 RL (Ω ) IC (A) VBB2 (V) IB2 (mA) ton (ms) 1.1typ tstg (ms) 3.2typ tf (ms) 1.1typ IB1 (mA) VBB1 (V) –10 External Dimensions MT-25(TO220) BE 2.5 2.5 C 16.0±0.712.0min 4.0max 8.8±0.2 1.35 0.65+0.2 -0.1 10.2±0.2 ø3.75±0.2 3.0±0.2 4.8±0.2 1.4 2.0±0.1 a b Weight : Approx 2.0g a. Type No. b. Lot No. B E C (70Ω ) Equivalent circuit Collector Current IC (A) IC –V CE Characteristics (Typical) –2 –6 –4 IB =–0.1mA –5mA –1mA–0.5mA –0.4mA –0.3mA –0.2mA –5A IC =–3A 0– 3 –2–1 (VCE =–4V) (VCE =–4V) 500 200 10000 40000 1000 5000 Typ (VCE =–4V) 100 5000 10000 500 1000 50000 25˚C –30˚C 125˚C 0.02 0.10.05 0.5 1 5 6 100 120 (VCE =–12V) Typ 00 25 50 75 100 125 150 0.4 0.5 1 10 100 1000 2000 h FE –IC Characteristics (Typical) h FE –IC Temperature Characteristics (Typical) IC –V BE Temperature Characteristics (Typical)V CE (sat)–IB Characteristics (Typical) Pc –Ta DeratingSafe Operating Area (Single Pulse) θj-a–t Characteristics fT –IE Characteristics (Typical) 125˚C (Case Temp)25˚C (CaseT emp) –30˚C (CaseT emp) Collector Current IC (A) Collector Current IC (A) Time t(ms) DC Current Gain h FE DC Current Gain h FE Transient Thermal Resistance θj-a(˚C/W) Cut-off Frequency fT (MH Z ) Emitter Current IE (A) Ambient Temperature Ta(˚C) Maximum Power Dissipation P C (W) With Infinite heatsink Without Heatsink Base Current IB (mA) Base-Emittor Voltage V BE (V)Collector-Emitter Voltage VCE (V) Collector-Emitter Saturation Voltage VCE(sat) (V) Collector Current IC (A)