Download PDF2SB1653 PANASONIC
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Silicon PNP triple diffusion planar type For power switching n Features l High collector to emitter VCEO l Low collector to emitter saturation voltage VCE(sat) l Allowing automatic insertion with radial taping n Absolute Maximum Ratings (TC =25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings –400 –400 – 0.5 1.5 150 –55 to +150 Unit V V V A A W n Electrical Characteristics (TC =25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Storage time Fall time Symbol I CBO ICEO IEBO V CEO hFE1 * hFE2 V CE(sat) V BE(sat) fT C ob ton tstg tf Conditions V CB = –400V , IE = 0 V CE = –100V , IB = 0 V EB = –5V , IC = 0 IC = –1mA, IB = 0 V CE = –5V , IC = –50mA V CE = –5V , IC = –300mA IC = –100mA, IB = –10mA V CE = –100mA, IB = –10mA V CB = –10V , IE = 0.2A, f = 1MHz V CB = –10V , IE = 0, f = 1MHz IC = –100mA, IB1 = –10mA, IB2 = 10mA, V CC = –150V , RL = 1.5kW min –400 typ – 0.25 – 0.8 1.0 0.8 1.0 max 280 – 0.5 –1.2 Unit mA mA mA V V V MHz pF ms ms ms *hFE1 Rank classification Rank P Q hFE1 80 to 160 130 to 280 Unit: mm 1:Emitter 2:Collector 3:Base MT3 Type Package 7.5–0.2 4.5 –0.2 90° 0.8C0.8C 0.4–0.1 0.8C 123 0.5–0.1 0.7–0.1 1.0–0.1 0.85–0.10.65–0.1 0.7–0.1 2.5–0.1 10.8–0.216.0–1.0 3.8–0.2
PC —T a I C —V CE V CE(sat)—I C hFE —I C C ob —V CB 0 160 40 120 80 14020 100 60 2.0 1.6 1.2 0.8 0.4 Without heat sink Ambient temperature Ta (˚C) Collector power dissipation PC (W ) –480 –400 –320 –240 –160 –80 Ta=25˚C –1mA –2mA –3mA –4mA –5mA–6mA –7mA –8mA –9mA IB=–10mA Collector to emitter voltage VCE (V) Collector current IC (mA ) –1 –10 –100 –1000 – 0.001 – 0.01 – 0.1 –10 IC /IB=10 Ta=75˚C –25˚C 25˚C Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) –1 –10 –100 –1000 240 200 160 120 VCE =–5V Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Forward current transfer ratio hFE –1 –10 –100 IE=0 f=1MHz T C =25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF)