2SB1628_15 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
www.kexin.com.cn 1 Tran sistors PNP Transistors 2SB1628 ■ Features
- High current capacitance
- Low collector saturation voltage 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -20 Collector - Emitter Voltage VCEO -16 Emitter - Base Voltage VEBO -6 Collector Current - Continuous IC -3 Collector Current - Pulse ICP -5 Collector Power Dissipation PC 2 W Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -20 Collector- emitter breakdown voltage VCEO Ic= -1 mA， IB=0 -16 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -6 Collector-base cut-off current ICBO VCB= -20 V , IE=0 -100 Emitter cut-off current IEBO VEB= -6V , IC=0 -100 IC=-2 A, IB=-100mA -0.35 IC=-3 A, IB=-150mA -0.55 Base - emitter saturation voltage VBE(sat) IC=-2 A, IB=-100mA -1.2 Base - emitter voltage VBE VCE= -2V, IC= -50mA -0.6 -0.7 hFE(1) VCE= -2V, IC= -500mA 140 560 hFE(2) VCE=- 2V, IC= -3 A 70 Turn-on time ton 70 Storage time tstg 110 Fall time tf 40 Collector output capacitance Cob VCB= -10V, IE= 0,f=1MHz 45 pF Transition frequency fT VCE= -3V, IE= 500mA 320 MHz IC = −1.0 A, VCC = −10 V IB1 = −IB2 = −0.1 A RL = 10 Ω ns DC current gain V nA Collector-emitter saturation voltage VCE(sat) V ■ Classification of hfe(1) Type 2SB1628-X 2SB1628-Y 2SB1628-Z Range 140-280 200-400 280-560 Marking ZX ZY ZZ
www.kexin.com.cn2 Transistors PNP Transistors 2SB1628 ■ Typical Characterisitics
www.kexin.com.cn 3 Tran sistors PNP Transistors 2SB1628 ■ Typical Characterisitics