2SB1624 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors 2SB1624
DESCRIPTION
- With TO-3PN package
- Complement to type 2SD2493
APPLICATIONS
- Audio ,regulator and general purpose PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -110 V VCEO Collector-emitter voltage Open base -110 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -6 A IB Base current -1 A PC Collector power dissipation TC=25℃ 60 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Fig.1 simplified outline (TO-3PN) and symbol
Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors 2SB1624 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=-30mA ;IB=0 -110 V VCEsat Collector-emitter saturation voltage I C=-5A ;IB=-5mA -2.5 V VBEsat Base-emitter saturation voltage I C=-5A ;IB=-5mA -3.0 V ICBO Collector cut-off current V CB=-110V; IE=0 -100 μA IEBO Emitter cut-off current V EB=-5V; IC=0 -100 μA hFE DC current gain I C=-5A ; VCE=-4V 5000 Cob Output capacitance I E=0 ; VCB=-10V;f=1MHz 110 pF fT Transition frequency I C=-0.5A ; VCE=-12V 100 MHz Switching times ton Turn-on time 1.1 μs ts Storage time 3.2 μs tf Fall time IC=-5A;RL=6Ω IB1=- IB2=-5mA VCC=-30V 1.1 μs hFE Classifications O P Y 5000-12000 6500-20000 15000-30000
Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors 2SB1624 PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm)