2SB1624 SANKEN
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*hFE Rank O(5000to12000), P(6500to20000), Y(15000to30000) IC –V CE Characteristics (Typical) h FE –IC Characteristics (Typical) h FE –IC Temperature Characteristics (Typical) IC –V BE Temperature Characteristics (Typical)V CE (sat)–IB Characteristics (Typical) Pc –Ta Derating –2 –6 –4 Collector-Emitter Voltage VCE (V) Collector Current IC (A) IB =–0.1mA –5mA –1mA–0.5mA –0.4mA –0.3mA –0.2mA Base Current IB (mA) Collector-Emitter Saturation Voltage VCE(sat) (V) –5A IC =–3A 0– 3 –2–1 Base-Emittor Voltage V BE (V) Collector Current IC (A) (VCE =–4V) 125˚C (Case Temp)25˚C (Case Temp)–30˚C (Case Temp) Collector Current IC (A) DC Current Gain h FE (VCE =–4V) 500 200 10,000 40,000 1,000 5,000 Typ (VCE =–4V) 100 5,000 10 ,000 500 1,000 50 ,000 Collector Current IC (A) DC Current Gain h FE 25˚C –30˚C 125˚C 0.5 1 5 10 50 100 500 1000 2000 Time t(ms) Transient Thermal Resistance θj-a(˚C/W) 0.02 0.10.05 0.5 1 5 6 100 120 80Cut-off Frequency fT (MH Z ) (VCE =–12V) Emitter Current IE (A) Typ Collector-Emitter Voltage VCE (V) Collector Current IC (A) –0.1 –0.05 –0.5 –10 –20 –5 10ms DC 100ms Without Heatsink Natural Cooling 3.5 00 25 50 75 100 125 150 Ambient Temperature Ta(˚C) Maximum Power Dissipation P C (W) With Infinite heatsink Without Heatsink Safe Operating Area (Single Pulse) θj-a–t Characteristics fT –IE Characteristics (Typical) Silicon PNP Epitaxial Planar Transistor(Complement to type 2SD2493) Application : Audio, Series Regulator and General Purpose Symbol VCBO VCEO VEBO IC IB PC Tj T stg 2SB1624 –110 –110 60(Tc=25°C) 150 –55 to +150 Unit V V V A A W n Absolute maximum ratings n Electrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB 2SB1624 –100max –100max –110min 5000min* –2.5max –3.0max 100typ 110typ Unit mA mA V V V MHz pF Conditions VCB=–110V VEB=–5V IC=–30mA VCE=–4V, IC=–5A IC=–5A, IB=–5mA IC=–5A, IB=–5mA VCE=–12V, IE=0.5A VCB=–10V, f=1MHz Darlington 2SB1624 (Ta=25°C) (Ta=25°C) n Typical Switching Characteristics (Common Emitter) VCC (V) –30 RL (Ω ) IC (A) VBB2 (V) IB2 (mA) ton (ms) 1.1typ tstg (ms) 3.2typ tf (ms) 1.1typ IB1 (mA) VBB1 (V) –10 External Dimensions MT-100(TO3P) 15.6±0.4 9.6 19.9±0.3 4.0 2.0 5.0±0.2 1.8 ø3.2±0.1 1.05+0.2 -0.1 20.0min 4.0max BE 5.45±0.1 5.45±0.1 C 4.8±0.2 0.65+0.2 -0.1 1.4 2.0±0.1 a b Weight : Approx 6.0g a. Type No. b. Lot No. B E C (70Ω ) Equivalent circuit