2SB1623 PANASONIC

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Technical content

Silicon PNP epitaxial planer type For power amplification I Features

  • High forward current transfer ratio hFE
  • Satisfactory linearity of forward current transfer ratio hFE
  • Dielectric breakdown voltage of the package: > 5 kV I Absolute Maximum Ratings TC = 25°C Unit: mm Parameter Symbol Rating Unit Collector to base voltage V CBO −60 V Collector to emitter voltage V CEO −60 V Emitter to base voltage V EBO −5V Peak collector current I CP −8A Collector current I C −4A Collector power TC = 25°CP C 40 W dissipation Ta = 25°C 2.0 Junction temperature T j 150 °C Storage temperature T stg −55 to +150 °C I Electrical Characteristics TC = 25°C Parameter Symbol Conditions Min Typ Max Unit Collector cutoff current I CBO VCB = −60 V, VBE = 0 −200 µA ICEO VCB = −30 V, IB = 0 −500 µA Emitter cutoff current I EBO VEB = −5 V, IC = 0 −2m A Collector to emitter voltage V CEO IC = −30 mA, IB = 0 −60 V Forward current transfer ratio h FE1 VCE = −3 V, IC = − 0.5 A 1 000 hFE2 * VCE = −3 V, IC = −3 A 1 000 10 000 Base to emitter voltage (DC value) V BE VCE = −3 V, IC = −3 A −2.5 V Collector to emitter saturation voltage V CE(sat)1 IC = −3 A, IB = −12 mA −2V VCE(sat)2 IC = −5 A, IB = −20 mA −4V Transition frequency f T VCB = −10 V, IC = − 0.5 A, f = 1 MHz 20 MHz Turn-on time t on IC = −3 A, IB1 = −12 mA, IB2 = 12 mA 0.3 µs Storage time t stg VCC = −50 V 2 µs Fall time t f 0.5 µs Note) *: Rank classification Rank P Q R hFE2 4 000 to 10 000 2 000 to 5 000 1 000 to 2 500 1.4±0.2 1.6±0.2 0.8±0.1 0.55±0.15 2.54±0.30 5.08±0.50 123 2.6±0.1 2.9±0.2 4.6±0.2 φ 3.2±0.1 3.0±0.5 9.9±0.3 15.0±0.513.7±0.2 4.2±0.2 Solder Dip 1: Base 2: Collector 3: Emitter