2SB1612 PANASONIC

Document overview

  • Manufacturer or author: Provided By digicamel.com
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Technical content

Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD2474 n Features l Low collector to emitter saturation voltage VCE(sat). l Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Base 2:Collector EIAJ SC–62 3:Emitter Mini Power Type Package 4.5–0.1 2.6–0.1 2.5–0.1 0.4max.1.0 +0.1 –0.2 4.0 +0.25 –0.20 3.0–0.15 1.5–0.1 0.4–0.08 0.5–0.08 1.5–0.1 0.4–0.04 1.6–0.2 45° marking 321Symbol V CBO V CEO V EBO ICP IC PC * Tj Tstg Ratings –10 –10 –2.4 150 –55 ~ +150 Unit V V V A A W n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Symbol I CBO V CBO V CEO V EBO hFE V CE(sat) fT C ob Conditions V CB = –7V , IE = 0 IC = –10mA, IE = 0 IC = –1mA, IB = 0 IE = –10mA, IC = 0 V CE = –2V , IC = 200mA IC = –1A, IB = –10mA V CB = –6V , IE = 50mA, f = 200MHz V CB = –6V , IE = 0, f = 1MHz min –10 –10 200 typ – 0.19 100 max 800 – 0.25 Unit mA V V V V MHz pF * Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion Marking symbol :2F

0 160 40 120 80 14020 100 60 1.4 1.2 0.4 1.0 0.8 0.2 0.6 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ambient temperature Ta (˚C) Collector power dissipation PC (W ) –1.2 –1.0 – 0.8 – 0.6 – 0.4 – 0.2 Ta=25˚C –2.5mA –2.0mA –1.5mA –1.0mA – 0.5mA IB=–3.0mA Collector to emitter voltage VCE (V) Collector current IC (A) –3.0 –2.5 –2.0 –1.5 –1.0 – 0.5 VCE =–2V Ta=75˚C –25˚C 25˚C Base to emitter voltage VBE (V) Collector current IC (A) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 IC /IB=100 Ta=75˚C 25˚C –25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 600 500 400 300 200 100 VCE =–2V Ta=75˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 1 3 10 30 100 240 200 160 120 VCB =–6V f=200MHz Ta=25˚C Emitter current IE (mA ) Transition frequency fT (MHz ) 240 200 160 120 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) PC — Ta I C — V CE IC — V BE V CE(sat) — IC hFE — IC fT — IE C ob — V CB