2SB1604 PANASONIC

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2SB1604, 2SB1604A Silicon PNP epitaxial planar type For low-voltage switching n Features l Low collector to emitter saturation voltage VCE(sat) l High-speed switching l Full-pack package with outstanding insulation, which can be in- stalled to the heat sink with one screw n Absolute Maximum Ratings (TC =25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings –40 –50 –20 –40 –20 –10 150 –55 to +150 2SB1604 2SB1604A 2SB1604 2SB1604A TC =25°C Ta=25°C Unit: mm 1:Base 2:Collector 3:Emitter TO–220E Full Pack Package 9.9–0.3 231 4.6–0.2 2.9–0.2 2.6–0.1 2.54–0.2 0.75–0.1 1.2–0.15 5.08–0.4 15.0–0.313.7 +0.5 –0.2 f3.2–0.1 3.0–0.2 8.0–0.24.1–0.2 Solder Dip 1.45–0.15 0.7–0.1 Unit V V V A A W n Electrical Characteristics (TC =25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Storage time Fall time Symbol I CBO IEBO V CEO hFE1 hFE2 * V CE(sat) V BE(sat) fT C ob ton tstg tf Conditions V CB = –40V, IE = 0 V EB = –5V , IC = 0 IC = –10mA, IB = 0 V CE = –2V , IC = – 0.1A V CE = –2V , IC = –3A IC = –10A, IB = – 0.33A IC = –10A, IB = – 0.33A V CE = –10V , IC = – 0.5A, f = 10MHz V CB = –10V , IE = 0, f = 1MHz IC = –3A, IB1 = – 0.1A, IB2 = 0.1A min –20 –40 typ 100 400 0.1 0.5 0.1 max –50 –50 260 – 0.6 –1.5 Unit mA mA V V V MHz pF ms ms ms 2SB1604 2SB1604A *hFE2 Rank classification Rank Q P hFE2 90 to 180 130 to 260

Power Transistors 2SB1604, 2SB1604A PC —T a I C —V CE V CE(sat)—I C V BE(sat)—I C hFE —I C fT —I C C ob —V CB ton, tstg, tf — IC Area of safe operation (ASO) 0 160 40 120 80 14020 100 60 (1) TC =Ta (2) With a 100 · 100 · 2mm Al heat sink (3) With a 50 · 50 · 2mm Al heat sink (4) Without heat sink (PC =2W) (1) (4) (3) (2) Ambient temperature Ta (˚C) Collector power dissipation PC (W ) –12 –10 TC =25˚C –80mA –60mA –50mA –40mA –35mA –20mA –15mA –30mA –25mA –10mA –5mA IB=–100mA Collector to emitter voltage VCE (V) Collector current IC (A) – 0.01 –10 – 0.1 – 0.03 – 0.3 IC /IB=30 TC =–25˚C 25˚C 100˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 100 300 1000 3000 10000 VCE =–2V TC =100˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 100 300 1000 3000 10000 IE=0 f=1MHz T C =25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 0.01 0.1 0.03 0.3 tstg ton tf Pulsed tw =1ms Duty cycle=1% I C /IB=30 (–IB1=IB2) VCC =–20V TC =25˚C Collector current IC (A) Switching time ton,tstg,tf (ms) – 0.01 –10 – 0.1 – 0.03 – 0.3 IC /IB=30 TC =100˚C –25˚C 25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 100 300 1000 3000 10000 VCE =–10V f=10MHz T C =25˚C Collector current IC (A) Transition frequency fT (MHz ) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 ICP IC 10ms t=1ms 2SB1604A 2SB1604 Non repetitive pulse TC =25˚C DC Collector to emitter voltage VCE (V) Collector current IC (A)

R th(t)—t 10–4 1010–3 10–110–2 11 0 3102 104 10–2 10–1 103 102 (1) (2) (1) Without heat sink (2) With a 100 · 100 · 2mm Al heat sink Time t (s) Thermal resistance Rth(t) (˚C/W) 2SB1604, 2SB1604A