2SB1603 SAVANTIC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 4
Technical content
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1603 2SB1603A
DESCRIPTION
- With TO-220F package
- Low collector saturation voltage
- High speed switching
APPLICATIONS
- For low-voltage switching applications PINNING PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Absolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS MAX UNIT 2SB1603 -40 VCBO Collector-base voltage 2SB1603A Open emitter -50 V 2SB1603 -20 VCEO Collector-emitter voltage 2SB1603A Open base -40 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -4 A ICM Collector current-peak -8 A Ta=25 2 PC Collector dissipation TC=25 25 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-220F) and symbol
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1603 2SB1603A CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2SB1603 -20 V(BR)CEO Collector-emitter breakdown voltage 2SB1603A IC=-10mA ;IB=0 -40 V VCEsat Collector-emitter saturation voltage I C=-2A ;IB=-0.1A -0.5 V VBEsat Base-emitter saturation voltage I C=-2A ;IB=-0.1A -1.5 V ICBO Collector cut-off current V CB=-40V; IE=0 -50 µA IEBO Emitter cut-off current V EB=-5V; IC=0 -50 µA hFE-1 DC current gain I C=-0.1A ; VCE=-2V 45 hFE-2 DC current gain I C=-1A ; VCE=-2V 90 260 fT Transition frequency I C=-0.5A ; VCE=-5V 150 MHz Switching times ton Turn-on time 0.3 µs tstg Storage time 0.4 µs tf Fall time IC=-2A; IB1=-IB2=-0.2A 0.1 µs hFE-2 Classifications Q P 90-180 130-260
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1603 2SB1603A PACKAGE OUTLINE Fig.2 Outline dimensions
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1603 2SB1603A