2SB1603 PANASONIC
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2SB1603, 2SB1603A Silicon PNP epitaxial planar type For low-voltage switching n Features l Low collector to emitter saturation voltage VCE(sat) l High-speed switching l Full-pack package with outstanding insulation, which can be in- stalled to the heat sink with one screw n Absolute Maximum Ratings (TC =25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings –40 –50 –20 –40 150 –55 to +150 2SB1603 2SB1603A 2SB1603 2SB1603A TC =25°C Ta=25°C Unit: mm 1:Base 2:Collector 3:Emitter TO–220E Full Pack Package 9.9–0.3 231 4.6–0.2 2.9–0.2 2.6–0.1 2.54–0.2 0.75–0.1 1.2–0.15 5.08–0.4 15.0–0.313.7 +0.5 –0.2 f3.2–0.1 3.0–0.2 8.0–0.24.1–0.2 Solder Dip 1.45–0.15 0.7–0.1 Unit V V V A A W n Electrical Characteristics (TC =25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol I CBO IEBO V CEO hFE1 hFE2 * V CE(sat) V BE(sat) fT ton tstg tf Conditions V CB = –40V, IE = 0 V EB = –5V , IC = 0 IC = –10mA, IB = 0 V CE = –2V , IC = – 0.1A V CE = –2V , IC = –1A IC = –2A, IB = – 0.1A IC = –2A, IB = – 0.1A V CE = –5V , IC = – 0.5A, f = 10MHz IC = –2A, IB1 = – 0.2A, IB2 = 0.2A min –20 –40 typ 150 0.3 0.4 0.1 max –50 –50 260 – 0.5 –1.5 Unit mA mA V V V MHz ms ms ms 2SB1603 2SB1603A *hFE2 Rank classification Rank Q P hFE2 90 to 180 130 to 260
Power Transistors 2SB1603, 2SB1603A PC —T a I C —V CE V CE(sat)—I C V BE(sat)—I C hFE —I C fT —I C ton, tstg, tf —I C Area of safe operation (ASO) 0 150 12510025 75 50 (1) TC =Ta (2) With a 100 · 100 · 2mm Al heat sink (3) Without heat sink (PC =2.0W) (1) (2) (3) Ambient temperature Ta (˚C) Collector power dissipation PC (W ) TC =25˚C –50mA –45mA –40mA –35mA –30mA –25mA –20mA –15mA –10mA –5mA IB=–80mA Collector to emitter voltage VCE (V) Collector current IC (A) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 IC /IB=20 25˚C –25˚C TC =100˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 IC /IB=20 TC =–25˚C 25˚C 100˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) – 0.1 – 0.3 –10 –30 –100 –300 –1000 VCE =–2V TC =100˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 0.1 0.3 100 300 1000 VCE =–2V f=10MHz T C =25˚C Collector current IC (A) Transition frequency fT (MHz ) 0.01 0.1 0.03 0.3 tstg ton tf Pulsed tw =1ms Duty cycle=1% I C /IB=10 (–IB1=IB2) VCC =–20V TC =25˚C Collector current IC (A) Switching time ton,tstg,tf (ms) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 Non repetitive pulse TC =25˚C ICP IC 10ms t=1ms 2SB1603A 2SB1603 Collector to emitter voltage VCE (V) Collector current IC (A)
Power Transistors 2SB1603, 2SB1603A R th(t)—t 10–4 1010–3 10–110–2 11 0 3102 104 10–2 10–1 102 (1) (2) (1) Without heat sink (2) With a 100 · 100 · 2mm Al heat sink Time t (s) Thermal resistance Rth(t) (˚C/W)