2SB1599 PANASONIC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
Silicon PNP epitaxial planer type For power amplification Complementary to 2SD2457 n Features l Low collector to emitter saturation voltage VCE(sat). l Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Base current Collector power dissipation Junction temperature Storage temperature 1:Base 2:Collector EIAJ:SC–62 3:Emitter Mini Power Type Package 4.5–0.1 2.6–0.1 2.5–0.1 0.4max.1.0 +0.1 –0.2 4.0 +0.25 –0.20 3.0–0.15 1.5–0.1 0.4–0.08 0.5–0.08 1.5–0.1 0.4–0.04 1.6–0.2 45° marking 321Symbol V CBO V CEO V EBO ICP IB PC * Tj Tstg Ratings –50 –40 – 0.6 150 –55 ~ +150 Unit V V V A A W n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Symbol I CBO ICEO IEBO V CBO V CEO hFE * V CE(sat) V BE(sat) fT C ob Conditions V CB = –20V, IE = 0 V CE = –12V , IB = 0 V EB = –5V , IC = 0 IC = –1mA, IE = 0 IC = –10mA, IB = 0 V CE = –5V , IC = –1A IC = –1.5A, IB = –0.15A IC = –2A, IB = –0.2A V CB = –5V , IE = 0.5A, f = 200MHz V CB = –5V , IE = 0, f = 1MHz min –50 –40 typ – 0.4 150 max –100 –100 220 –1.5 Unit mA mA mA V V V V MHz pF * Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion Marking symbol :1X *hFE Rank classification Rank P Q R hFE 50 ~ 100 80 ~ 160 100 ~ 220
0 160 40 120 80 14020 100 60 1.4 1.2 0.4 1.0 0.8 0.2 0.6 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ambient temperature Ta (˚C) Collector power dissipation PC (W ) –4.0 –3.0 –1.0 –2.5 –3.5 –2.0 – 0.5 –1.5 TC =25˚C IB=–40mA –30mA –25mA –20mA –15mA –10mA –35mA –5mA Collector to emitter voltage VCE (V) Collector current IC (A) – 0.01 – 0.03 – 0.1 – 0.3 –10 IC /IB=10 Ta=100˚C 25˚C –25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) – 0.01 – 0.03 – 0.1 – 0.3 –10 IC /IB=10 Ta=–25˚C25˚C 100˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 100 300 1000 VCE =–5V TC =100˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 0.01 0.1 1 100.03 0.3 3 240 200 160 120 VCB =–5V f=50MHz Ta=25˚C Emitter current IE (A) Transition frequency fT (MHz ) 150 120 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 0.001 0.01 0.1 1 10 –80 –60 –20 –50 –70 –40 –10 –30 Ta=25˚C 2SA699A 2SA699 Base to emitter resistance RBE (kW ) Collector to emitter voltage VCER (V) 0 120 1008020 60 40 1000 100 300 VCE =–12V Ambient temperature Ta (˚C) ICEO (Ta) ICEO (Ta=25˚C) PC — Ta I C — V CE V CE(sat) — IC V BE(sat) — IC hFE — IC fT — IE C ob — V CB V CER — R BE ICEO — Ta