2SB1599_15 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
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Technical content
www.kexin.com.cn 1 Transistors PNP Transistors 2SB1599 ■ Features
- Low collector to emitter saturation voltage VCE(sat).
- Complementary to 2SD2457 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -40 Emitter - Base Voltage VEBO -5 Base Current IB -0.6 Collector Current - Pulse ICP -3 Collector Power Dissipation PC 1 W Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -1 mA， IE=0 -50 Collector- emitter breakdown voltage VCEO Ic= -10 mA, IB=0 -40 Emitter - base breakdown voltage VEBO IE= -1 mA， IC=0 -5 Collector-base cut-off current ICBO VCB= -50V , IE=0 -1 Collector-emitter cut-off current ICEO VCE= -40V , IB=0 -10 Emitter cut-off current IEBO VEB= -5V , IC=0 -0.1 Collector-emitter saturation voltage VCE(sat) IC=-1.5 A, IB=-150 mA -0.4 -1 Base - emitter saturation voltage VBE(sat) IC=-2 A, IB=-200 mA -1.5 DC current gain hFE VCE= -5V, IC= -1 A 50 220 Collector output capacitance Cob VCB= -5V, IE= 0,f=1MHz 70 pF Transition frequency fT VCE= -5V, IE= 500 mA,f=200MHz 150 MHz V V uA ■ Classification of hfe Type 2SB1599-P 2SB1599-Q 2SB1599-R Range 50-100 80-160 100-220 Marking 1XP 1XQ 1XR
www.kexin.com.cn2 Transistors PNP Transistors 2SB1599 ■ Typical Characterisitics 0610 40 12080 14020 10060 1.4 1.2 0.4 1.0 0.8 0.2 0.6 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ambient temperature Ta (˚C) Collector power dissipation PC (W) –4.0 –3.0 –1.0 –2.5 –3.5 –2.0 – 0.5 –1.5 TC=25˚C IB=–40mA –30mA –25mA –20mA –15mA –10mA –35mA –5mA Collector to emitter voltage VCE (V) Collector current IC (A) – 0.01 – 0.03 – 0.1 – 0.3 –10 IC/IB=10 Ta=100˚C 25˚C –25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) – 0.01 – 0.03 – 0.1 – 0.3 –10 IC/IB=10 Ta=–25˚C25˚C 100˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 100 300 1000 VCE=–5V TC=100˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 0.01 0.1 1 100.03 0.3 3 240 200 160 120 VCB=–5V f=50MHz Ta=25˚C Emitter current IE (A) Transition frequency fT (MHz) 150 120 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 0.001 0.01 0.1 1 10 –80 –60 –20 –50 –70 –40 –10 –30 Ta=25˚C 2SB1599 Base to emitter resistance RBE (kΩ) Collector to emitter voltage VCER (V) 0210 1008020 6040 1000 100 300 VCE=–12V Ambient temperature Ta (˚C) ICEO (Ta) ICEO (Ta=25˚C) PC IaT — C — VCE VCE(sat) — I C VBE(sat) — I C hFE — I C fT — I E Cob — VCB VCER — R BE ICEO — Ta