2SB1592 PANASONIC

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Silicon PNP epitaxial planer type For low-frequency amplification n Features l Low collector to emitter saturation voltage VCE(sat). l Allowing supply with the radial taping. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Emitter 2:Collector 3:Base TO–92NL Package 5.0–0.2 13.5–0.5 0.7–0.2 8.0–0.2 1.27 123 1.27 4.0–0.2 0.45 +0.15 –0.10.45 +0.15 –0.1 2.3–0.2 0.7–0.1 2.54–0.15 Symbol V CBO V CEO V EBO ICP * IC PC Tj Tstg Ratings –30 –25 –11 –10 150 –55 ~ +150 Unit V V V A A W n Electrical Characteristics (Ta=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Symbol V CBO V CEO V EBO hFE *1 V CE(sat) fT C ob Conditions IC = –10mA, IE = 0 IC = –1mA, IB = 0 IE = –10mA, IC = 0 V CE = –2V , IC = –1.4A*2 IC = –1.4A, IB = –25mA*2 V CB = –6V , IE = 50mA, f = 200MHz V CB = –10V , IE = 0, f = 1MHz min –30 –25 –11 typ – 0.16 150 max 450 – 0.22 Unit V V V V MHz pF * Applied are shot pulse of £1ms width *2 Pulse measurement *1hFE Rank classification Rank Q R hFE 90 ~ 180 130 ~ 450

0 160 40 120 80 14020 100 60 1.2 1.0 0.8 0.6 0.4 0.2 Ambient temperature Ta (˚C) Collector power dissipation PC (W ) –3.0 –2.5 –2.0 –1.5 –1.0 – 0.5 Ta=25˚C –10mA –8mA –6mA –4mA –2mA IB=–12mA Collector to emitter voltage VCE (V) Collector current IC (A) VCE =–2V Ta=75˚C –25˚C 25˚C Base to emitter voltage VBE (V) Collector current IC (A) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 IC /IB=56 Ta=75˚C 25˚C –25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 600 500 400 300 200 100 VCE =–2V Ta=75˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 600 500 400 300 200 100 VCB =–6V f=200MHz Ta=25˚C Emitter current IE (mA ) Transition frequency fT (MHz ) 240 200 160 120 f=1MHz IE=0 Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) PC — Ta I C — V CE IC — V BE V CE(sat) — IC hFE — IC fT — IE C ob — V CB