2SB1588 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
i, L/ nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Darlington Power Transistor TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 2SB1588
DESCRIPTION
- High DC Current Gain- : hFE= 5000(Min)@lc= -7A
- Low-Collector Saturation Voltage- : VCE(satr -2.5V(Max.)@lc= -7A
- Complement to Type 2SD2439
APPLICATIONS
- Designed for audio, series regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current- Continuous Collector Power Dissipation @ TC-25°C Junction Temperature Storage Temperature Range VALUE -160 -150 -10 150 -55-150 UNIT V V V A A W ^011)93
- VWH yr PIN 1.BASE 2. COLLECTOR 3. EMITTER 1 2 3 TO-3PML package J;-1"'-'""^ ZSC-TF \\f V: .1 A . •-' |i- IT " f DIM A B C D F G H j K L N Q R S Y Z Z G mm MIN 19.90 15,90 5,50 0.90 3.30 2.90 5.90 0 595 22.30 1.90 10.80 4.90 3.75 3.20 9.90 4.70 1.90 MAX 20.10 16.10 5.70 1.10 3.50 3.10 6.10 0605 22.50 2.10 11.00 5.10 3.95 3.40 10.10 4.90 2.10 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
Silicon PNP Darlington Power Transistor 2SB1588
ELECTRICAL CHARACTERISTICS
fc=2B'C unless otherwise specified SYMBOL V(BR)CEO VcE(sat) VBE(sat) ICBO IEBO hFE COB fr PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector Output Capacitance Current-Gain — Bandwidth Product CONDITIONS lc= -30mA; IB= 0 |c= -7A; IB= -7mA lc= -7 A; IB= -7mA VCB=-160V;IE=0 VEB= -5V; lc= 0 lc= -7A; VCE= -4V lE=0;VCB=-10V;f=1MHz IE=2A;VCE=-12V MIN -150 5000 TYP. 230 MAX -2.5 -3.0 -100 -100 30000 UNIT V V V uA uA PF MHz Switching Times ton tstg tf Turn-on Time Storage Time Fall Time lc=-7A; lBi=-lB2=-7mA, Vcc= -70V, RL= 1 0 a 0.8 3.0 1.2 11 S u s 11 S Classifications o 5000-12000 P 6500-20000 Y 15000-30000