2SB1588 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors 2SB1588 DESCRIPTION ·
- With TO-3PML package
- Complement to type 2SD2439
APPLICATIONS
- Audio ,regulator and general purpose PINNING PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -160 V VCEO Collector-emitter voltage Open base -150 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -10 A IB Base current -1 A PC Collector power dissipation TC=25℃ 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Fig.1 simplified outline (TO-3PML) and symbol
Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors 2SB1588 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=-50mA; IB=0 -150 V VCEsat Collector-emitter saturation voltage I C=-7 A;IB=-7m A -2.5 V VBEsat Base-emitter saturation voltage I C=-7 A;IB=-7m A -3.0 V ICBO Collector cut-off current V CB=-160V; IE=0 -100 μA IEBO Emitter cut-off current V EB=-5V; IC=0 -100 μA hFE DC current gain I C=-7A ; VCE=-4V 5000 fT Transition frequency I C=-2A ; VCE=-12V 50 MHz COB Output capacitance I E=0; VCB=-10V;f=1MHz 230 pF Switching times ton Turn-on time 0.8 μs ts Storage time 3.0 μs tf Fall time IC=-7A;RL=10Ω IB1=-IB2=-7mA VCC=-70V 1.2 μs hFE classifications O P Y 5000-12000 6500-20000 15000-30000
Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors 2SB1588 PACKAGE OUTLINE Fig.2 Outline dimensions