2SB1587 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors 2SB1587 DESCRIPTION ·
- With TO-3PML package
- Complement to type 2SD2438
APPLICATIONS
- Audio, Series Regulator and General Purpose PINNING PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -160 V VCEO Collector-emitter voltage Open base -150 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -8 A IB Base current -1 A PC Collector power dissipation TC=25℃ 75 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Fig.1 simplified outline (TO-3PML) and symbol
Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors 2SB1587 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=-30mA; IB=0 -150 V VCEsat Collector-emitter saturation voltage I C=-6 A;IB=-6m A -2.5 V VBEsat Base-emitter saturation voltage I C=-6 A;IB=-6m A -3.0 V ICBO Collector cut-off current V CB=-160V; IE=0 -100 μA IEBO Emitter cut-off current V EB=-5V; IC=0 -100 μA hFE DC current gain I C=-6A ; VCE=-4V 5000 fT Transition frequency I C=-1A ; VCE=-12V 65 MHz COB Output capacitance I E=0; VCB=-10V;f=1MHz 160 pF Switching times ton Turn-on time 0.7 μs ts Storage time 3.6 μs tf Fall time IC=-6A;RL=10Ω IB1=-IB2=-6mA VCC=-60V 0.9 μs hFE classifications O P Y 5000-12000 6500-20000 15000-30000
Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors 2SB1587 PACKAGE OUTLINE Fig.2 Outline dimensions