2SB1571_15 KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 3

Technical content

www.kexin.com.cn 1 Transistors PNP Transistors 2SB1571 ■ Features

  • Low collector-emitter saturation voltage
  • Complementary to 2SD2402 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -30 Emitter - Base Voltage VEBO -6 Collector Current - Continuous IC -5 Collector Current - Pulse ICP -8 Collector Power Dissipation PC 2 W Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V A ■ Classification of hfe(2) Type 2SB1571-X 2SB1571-Y 2SB1571-Z Range 100-200 160-320 200-400 Marking HX HY HZ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 uA， IE=0 -50 Collector- emitter breakdown voltage VCEO Ic= -1 mA, IB=0 -30 Emitter - base breakdown voltage VEBO IE= -100 uA， IC=0 -6 Collector-base cut-off current ICBO VCB= -50V , IE=0 -0.1 Emitter cut-off current IEBO VEB= -6V , IC=0 -0.1 Base - emitter saturation voltage VBE(sat) IC=-3 A, IB=-150 mA -0.89 -1.2 Base - emitter voltage VBE VCE= -1V, IC= -100 mA -0.6 -0.7 VCE= -1V, IC= -1 A 80 VCE= -1V, IC= -2 A 100 200 400 Turn-on Time ton 265 Storage Time tstg 350 Fall Time tf 50 Collector output capacitance Cob VCB= -10V, IE= 0,f=1MHz 100 pF Transition frequency fT VCE= -10V, IE= 500 mA 150 MHz IC = −2.0 A, VCC = −10 V, RL = 5.0 Ω, IB1 = −IB2 = −0.1 A, ns DC current gain hFE V V uA Collector-emitter saturation voltage VCE(sat)

www.kexin.com.cn2 Transistors PNP Transistors 2SB1571 ■ Typical Characterisitics DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TA - Ambient Temperature - ˚C 0 12090 05103 100 dT - Percentage of Rated Power - % COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE IB = 10 mA 20 mA 30 mA50 mA40 mA VCE - Collector to Emitter Voltage - V IC - Collector Current - A DC CURRENT GAIN vs. COLLECTOR CURRENT 1000 100 200 500 IC - Collector Current - A hFE - DC Current Gain VCE = 1 V TA = 125˚C 75˚C 25˚C 0˚C 25˚C COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 400200 600 800 1000 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.002 0.001 VBE - Base to Emitter Voltage - mV IC - Collector Current - A VCE = V T A = 125˚ C 0˚C75˚ C –25˚ C COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT 1000 500 200 100 IC = 20 IB. IC - Collector Current - A VCE(sat) - Collector Saturation Voltage - mV TA = 125˚C 75˚C 25˚C 0˚C 25˚C FORWARD BIAS SAFE OPERATING AREA 521 10 10020 50 0.05 0.02 0.01 0.5 0.2 0.1 VCE - Collector to Emitter Voltage - V IC - Collector Current - A TA = 25˚C Single Pulse PW = 1 ms 10 ms 100 ms DC

www.kexin.com.cn 3 Tran sistors PNP Transistors 2SB1571 ■ Typical Characterisitics GAIN BANDWIDTH PRODUCT vs. EMITTER CURRENT 1000 200 500 100 IE - Emitter Current - A fT - Gain Bandwidth Product - MHz VCE = 10 V SWITCHING CHARACTERISTICS ton - Turn-On Time - s tstg - Storage Time - s tf - Fall Time - s IC - Collector Current - A 0.05 0.1 0.2 0.5 10.2 0.50.1 2 5 10 VCC = 10 V IC = 20 IB. IB1 = IB2 ton tstg tf COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT 1000 500 200 100 IC = 50 IB. IC - Collector Current - A VCE(sat) - Collector Saturation Voltage - mV TA = 125˚C 75˚C 25˚C 0˚C 25˚C 0.5 0.2 0.1 IC = 20 IB. BASE SATURATION VOLTAGE vs. COLLECTOR CURRENT IC - Collector Current - A VBE(sat) - Base Saturation Voltage - V OUTPUT CAPACITANCE vs. REVERSE VOLTAGE 1000 200 500 100 VCB - Collector to Base Voltage - V Cob - Outpur Capacitance - pF f = 1.0 MHz 10.2 0.50.1 2 5 10010 20 50