2SB1570 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 iscSiliconPNPDarlingtonPowerTransistor 2SB1570
DESCRIPTION
- High Collector-EmitterBreakdown Voltage- :V(BR)CEO=-150V(Min)
- Low-Collector Saturation Voltage- :VCE(sat)=-2.5V(Max.)@IC=-7A
- ComplementtoType 2SD2401
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operatio
APPLICATIONS
- Designedforaudio,seriesregulatorandgeneralpurpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage -160 V VCEO Collector-EmitterVoltage -150 V VEBO Emitter-BaseVoltage -5 V IC CollectorCurrent-Continuous -12 A IB BaseCurrent-Continuous -1 A PC CollectorPowerDissipation @TC=25℃ 150 W TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -55~150 ℃
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 iscSiliconPNPDarlingtonPowerTransistor 2SB1570 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-EmitterBreakdownVoltage IC=-30mA;IB=0 -150 V VCE(sat) Collector-EmitterSaturationVoltage IC=-7A;IB=-7mA -2.5 V VBE(sat) Base-EmitterSaturationVoltage IC=-7A;IB=-7mA -3.0 V ICBO CollectorCutoffCurrent VCB=-160V;IE=0 -100 μA IEBO EmitterCutoffCurrent VEB=-5V;IC=0 -100 μA hFE DCCurrentGain IC=-7A;VCE=-4V 5000 30000 COB CollectorOutputCapacitance IE=0;VCB=-10V;f=1MHz 230 pF fT Current-Gain—BandwidthProduct IC=-2A;VCE=-12V 50 MHz hFE Classifications O P Y 5000-12000 6500-20000 15000-30000