2SB1561-Q KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 3

Technical content

www.kexin.com.cn 1 SMD Type Transistors 1.80+0.1 -0.1 4.50+0.1 -0.1 2.50+0.1 -0.1 0.80+0.1 -0.1 4.00+0.1 -0.1 0.53+0.1 -0.1 0.48+0.1 -0.1 1.50+0.1 -0.1 0.44+0.1 -0.1 2.60+0.1 -0.1 0.40+0.1 -0.1 3.00+0.1 -0.1 SOT-89 Unit: mm 1. Base 2. Collector 3. Emiitter 1. Source 2. Drain 3. Gate 1 2 3

1 Base

2 Collector

3 Emitter

■ Features

  • Collector Current Capability IC=-2A
  • Collector Emitter Voltage VCEO=-60V
  • Low saturation Voltage typically VCE (SAT)=-0.15Vat IC/IB=-1A/-50mA ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -60 Emitter - Base Voltage VEBO -6 IC -0.5 IC P -6 PC 0.5 PCM 2 Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V Collector Current - Continuous Collector Power Dissipation W A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Testconditons Min Typ Max Unit Collecto- base breakdown voltage VCBO Ic= -50 µA， IE=0 -60 Collector- emitter breakdown voltage VCEO Ic= -1 mA， IB=0 -60 Emitter - base breakdown voltage VEBO IE= -50μA， IC =0 -6 Collector-base cut-off current ICBO VCB= -50 V , IE=0 -100 Collector- emittercut-off current ICEO VCB= -48 V , IE=0 -700 Emitter cut-off current IEBO VEB= -5V , IC=0 -100 Collector-emitter saturation voltage VCE(sat) IC=-1A, IB=-50mA -0.15 -0.35 Base - emitter saturation voltage VBE(sat) IC=-1A, IB=-50mA -1.2 hF E(1) VCE= -2V, IC= -0.5A 120 270 hF E(2) VCE=- 2V, IC= -1.5A 45 Output capacitance Cob VCB= -10V, IE= 0A,f=1MHz 23 pF Transition frequency fT VCE= -2V, IE= -0.5A,f=100MHz 200 MHz DC current gain V V nA ■ Marking Marking BL/QN

Fig.1 Grounded emitter output characteristics COLLECTOR TO EMITTER VOLTAGE : V CE −2.0 0.0 −0.4 −0.8 −1.2 −1.6 COLLECTOR CURRENT : l C (A) −20mA −18mA −16mA −14mA −12mA −10mA −8mA −6mA −4mA I B =−2mA Fig.2 Grounded emitter propagatio n characteristics −0.4 −0.8 −1.2 −1. COLLECTOR CURRENT : I C (A) BASE TO EMITTER VOLTAGE : V BE (V) −0.5 −0.2 −0.1 −0.05 −0.02 −0.01 −5m −2m −1m V CE Ta =100 −40 Fig.3 DC current gain vs. collector current ( ΙΙ −5m −10m−100m −100m 100 200 1000 500 COLLECTOR CURRENT : I C (A) DC CURRENT GAIN : h FE Ta=25 V CE = −5V −2V −1V Fig.4 Collector-emitter saturation voltage vs. collector current ( Ι −5m −10m−100m −100m −5−1 −10 −20 −50 −100 −200 −1000 −500 COLLECTOR CURRENT : I C (A) COLLECTOR SATURATION VOLTAGE : V CE(sat) (mV) I C B =20 Ta=100°C 25°C −40°C Fig.5 Gain bandwidth product vs. emitter current 2m 5m 10m 20m 50m 100m200m 500m 1 100 200 1000 500 EMITTER CURRENT : I E (A) TRANSITION FREQUENCY : f T (MHz) Ta=25°C V CE =−2V Fig.6 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage −0.1 −1 −10 −100 100 200 1000 500 COLLECTOR TO BASE VOLTAGE : V CE EMITTER TO BASE VOLTAGE : V EB (V) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) Ta=25°C f=1MHz I E =0A I C =0A Cib Cob SMD Type ICSMD Type Transistors 2SB1561-Q www.kexin.com.cn 2 Typical Characteristics

Fig.3 DC current gain vs. collector current ( Ι ) −5m −10m−100m −100m 100 200 1000 500 COLLECTOR CURRENT : I C (A) DC CURRENT GAIN : h FE V CE =2V Ta=100 −40 Fig.6 Collector-emitter saturation voltage vs. collector current ( ΙΙ −5m −10m−100m −100m −5−1 −10 −20 −50 −100 −200 −1000 −500 COLLECTOR CURRENT : I C (A) COLLECTOR SATURATION VOLTAGE : V CE(sat) (mV) Ta=25°C I C B =50 Fig.9 Safe operating area 0.2 10.5 2 5 10 20 50 100 200 500 10m 20m 50m 100m 200m 500m COLLECTOR TO EMITTER VOLTAGE : V CE COLLECTOR CURRENT : l C (A) DC Ta=25°C Single pulse P W =1ms P W =100ms Pw =10ms Ic max(Pulse) SMD Type ICSMD Type Transistors 2SB1561-Q Typical Characteristics www.kexin.com.cn 3