2SB1507 SANYO

Document overview

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Technical content

Features

+ Low collector-to-emitter saturation voltage : Vor(sat) =(—)0.4Vmax. - Wide ASO and highly registant to breakdown. - Micaless package facilitating easy mounting. ( ):2SB1507 . Absolute Maximum Ratings at Ta= 25°C unit Collector-to-Base Voltage Voso (—)60 v Collector-to-Emitter Voltage Vcro (-)50 v Emitter-to-Base Voltage VeBo (-)6 v Collector Current Ic (-)7 A Peak Collector Current jop (—)20 A Collector Dissipation Po 3.0 WwW Te=25°C 40 WwW Junction Temperature Tj 150 °C Storage Temperature Tstg -55to+150 °C Electrical Characteristics at Ta=25°C min typ © max unit Collector Cutoff Current IcBo Vop=(-)40V Ig =0 (-)0.1 mA Emitter Cutoff Current Ippo Vep=(—)4V,Ic=0 (—)0.1 mA DC Current Gain hpg(1) Vep=(-)2V,Ig=(—)1A TOK 280% : hppg(2) Vor=(—)2V,Ig=(—)5A 30 Gain-Bandwidth Product fp Vor=(-)5V,Ig=(—-)1A 10 MHz C-E Saturation Voltage Vor(sat) Ig=(—)4A,Ip=(—)0.4A (-)0.4 v C-B Breakdown Voltage Vercso Ic=(—)1lmAIg=0 (-)60 Vv C-E Breakdown Voltage Veryceo Io=(—)1mA,Rpp=© (-)50 Vv E-B Breakdown Voltage ViereBO Ip=(—)1mA,Ic¢=0 (-)6 v Turn-ON Time ton See specified Test Circuit. 0.2 BS Storage Time tstg 4 (0.7)0.9 BS Fall Time te * (0.1)0.3 us * : The 25B1507/2SD2280 are classified by 1A hpg as follows. . (unit : mm) 22.0 20.4 Switching Time Test Circuit so F22 as 9 35 ° [I 208 re. 4 —— d tnoetgians 162 TT f rs i a Nota eey out 3 |-@ fo q (8 #14 —— 21.0. E: Emitter ‘ 4 100% |470%) C: Collector -5V zov B: Base (For PNP, the'polarity is reversed.) a Os. SANYO :TO3PML Unit (resistance : 2, capacitance : F) SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno; Taito-ku, TOKYO, 110 JAPAN 5111MH, JK(KOTO) No.3713-1/3

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5 it St s Z| Tr Wit £ o 8-10 PANN TE gd PT ea F pf tT Ay 24 [J en AN 8 4 re YI & 4 — ~0.1} Lms to 100ims : Single pulse ij {| 0.1L ims to 100ms : Single pulse Lt tI { Te=Z5° a ite=25tc || yd Collector-to-Emitter Voltage,Vog — V Collector-to-Emitter Voltage, Vox — V

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¢ Kyi pg IN PUN.) a 3 r= 5 | | [Ne TT) ds . Q 1.2] a : [Tt NET 3 ie WT NE| oa NI = 3 on Hy N° oti N 2 eee | MN 0 20° 40 60 80 10 120 10 160 a RO RD Ambient Temperature, Ta — °C Ambient Temperature, Ta — °C ME No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall ® Accept tull responsibility and indemnify and defend SANYO ELECTRIC CO, LTO., its affiliates, subsidiaries and distributors and ali ‘their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: . ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD. its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. WM Information (including cirouit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties, ee No.3713-3/3