2SB1503 NJSEMI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

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20 STERN AVE,

SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Darlington Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SB1503

DESCRIPTION

  • High DC Current Gain- : hFE= 5000(Min)@lc= -7A
  • Low-Collector Saturation Voltage- : VcE<satr -2.5V(Max.)@lc= -7A
  • Complement to Type 2SD2276

APPLICATIONS

  • Designed for power amplifier applications
  • Optimum for 11OW HiFi output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICM PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @ TC=25°C Collector Power Dissipation @ Ta=25'C Junction Temperature Storage Temperature Range VALUE -160 -140 -12 120 3.5 150 -55-150 UNIT V V V A A W PIN 1.BASE 2. COLLECTOR 1 2 3 TO-3PL package DIM A B C D E F G H J K N P q R u w mm MIN 25,50 19.80 4.50 0.90 2,30 2.40 10.80 3.10 0.50 20.00 3.90 2.40 3.10 1.90 3.90 2.90 MAX 26.50 20 JO 5.50 1.10 JJO 2.60 11.00 S.30 0.70 21.00 4.10 2.60 3.50 2.10 4.10 3.10 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

Silicon PNP Darlington Power Transistor 2SB1503

ELECTRICAL CHARACTERISTICS

Tc=25'C unless otherwise specified SYMBOL V(BR)CEO VcE(sat) VeE(sat) ICBO ICEO IEBO hpE-1 hpE-2 fl PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc= -30mA; IB= 0 lc= -7A; IB= -7mA lo= -7A; IB= -7mA VGB=-160V;IE=0 VCE=-140V; IB=0 VEB= -5V; lc= 0 lc=-1A;VCE=-5V lc= -7A; VCE= -5V lc=-0.5A;VCE=-10V MIN -140 2000 5000 TYP. MAX -2.5 -3.0 -100 -100 -100 30000 UNIT V V V uA uA uA MHz Switching Times ton Utg tf Turn-on Time Storage Time Fall Time lc= -7A; IB1= -\\B2- -7mA, Vcc= -50V 1.0 1.5 1.2 u s u s 11 S hpE-2 Classifications Q 5000-15000 S 7000-21000 P 8000-30000