2SB1503 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1503
DESCRIPTION
- High DC Current Gain- : h FE= 5000(Min)@IC= -7A
- Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@IC= -7A
- Complement to Type 2SD2276
APPLICATIONS
- Designed for power amplifier applications
- Optimum for 110W HiFi output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak -12 A Collector Power Dissipation @ TC=25℃ 120 PC Collector Power Dissipation @ Ta=25℃ 3.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1503
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 -140 V VCE(sat) Collector-Emitter Saturation Voltage IC= -7A; IB= -7mA B -2.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -7A; IB= -7mA B -3.0 V ICBO Collector Cutoff Current VCB= -160V; IE= 0 -100 μA ICEO Collector Cutoff Current VCE= -140V; IB= 0 -100 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -100 μA hFE-1 DC Current Gain IC= -1A; VCE= -5V 2000 hFE-2 DC Current Gain IC= -7A; VCE= -5V 5000 30000 fT Current-Gain—Bandwidth Product IC= -0.5A; VCE= -10V 20 MHz Switching Times ton Turn-on Time 1.0 μs tstg Storage Time 1.5 μs tf Fall Time IC= -7A; IB1= -IB2= -7mA, VCC= -50V 1.2 μs hFE-2 Classifications Q S P 5000-15000 7000-21000 8000-30000 isc Website：www.iscsemi.cn 2