2SB1502 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Darlington Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SB1502
DESCRIPTION
- High DC Current Gain- : hFE= 5000(Min)@lc= -4A
- Low-Collector Saturation Voltage- : VCE(satr -2.5V(Max.)@lc= -4A
- Complement to Type 2SD2275
APPLICATIONS
- Designed for power amplifier applications
- Optimum for 55W HiFi output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25x:) SYMBOL VCBO VCEO VEBO Ic I CM PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @ Tc=25"C Collector Power Dissipation @ Ta=25-C Junction Temperature Storage Temperature Range VALUE -120 -100 3.5 150 -55-150 UNIT V V V A A W 1 2 3 PIN 1.BASE 2. COLLECTOR 3. EMITTER TO-3PL package in . * T D A uWf U iW !'-**M DIM A B C D E F G H J K N P q R U W mm WIN 2S.50 1950 4.50 0.90 2.30 2.40 10.80 3.10 0^0 20.00 3.90 2.40 3.10 1.90 3.90 2.90 MAX 20 JO 5.50 1.10 1.20 2.60 11.00 3.30 0.70 21.00 4.10 2.60 3.50 2.10 4.10 3.10 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets nre current before placing orders. Quality Semi-Conductors
Silicon PNP Darlington Power Transistor 2SB1502
ELECTRICAL CHARACTERISTICS
TC=25"C unless otherwise specified SYMBOL V(BR)CEO VcE(sat) VeE(sat) ICBO ICED IEBO hpE-1 hpE-2 fi PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc= -30mA; IB= 0 lc= -4A; !B= -4mA lc= -4A; IB= -4mA VCB=-120V;IE=0 VCE=-100V;IB=0 VEB= -5V; lc= 0 lc=-1A; V0E=-5V lc= -4A; VCE= -5V lc=-0.5A;VCE=-10V MIN -100 2000 5000 TYP. MAX -2.5 -3.0 -100 -100 -100 30000 UNIT V V V uA uA uA MHz Switching Times ton tstg tf Turn-on Time Storage Time Fall Time lc= ~4A; IB1= -Is2= -4mA, Vcc- -50V 1.0 0.8 1.0 u s 11 S u s hFE_2 Classifications Q 5000-15000 S 7000-21000 P 8000-30000