2SB1502 PANASONIC
Document overview
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Technical content
Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2275 n Features l Optimum for 55W HiFi output l High foward current transfer ratio hFE : 5000 to 30000 l Low collector to emitter saturation voltage VCE(sat): < 2.5V n Absolute Maximum Ratings (TC =25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings –120 –100 3.5 150 –55 to +150 Unit V V V A A W n Electrical Characteristics (TC =25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol I CBO ICEO IEBO V CEO hFE1 hFE2 * V CE(sat) V BE(sat) fT ton tstg tf Conditions V CB = –120V , IE = 0 V CE = –100V , IB = 0 V EB = –5V , IC = 0 IC = –30mA, IB = 0 V CE = –5V , IC = –1A V CE = –5V , IC = –4A IC = –4A, IB = –4mA IC = –4A, IB = –4mA V CE = –10V , IC = – 0.5A, f = 1MHz IC = –4A, IB1 = –4mA, IB2 = 4mA, V CC = –50V min –100 2000 5000 typ 1.0 0.8 1.0 max –100 –100 –100 30000 –2.5 –3.0 Unit mA mA mA V V V MHz ms ms ms TC =25°C Ta=25°C Unit: mm Internal Connection B C E *hFE2 Rank classification Rank Q S P hFE2 5000 to 15000 7000 to 21000 8000 to 30000 1:Base 2:Collector 3:Emitter TOP–3L Package 20.0–0.5 6.010.0 26.0–0.520.0–0.5 1.52.5 Solder Dip 10.9–0.5 123 2.0–0.3 3.0–0.3 1.0–0.2 5.0–0.3 3.0 4.02.0 5.45–0.3 0.6–0.2 1.5 2.7–0.3 1.5 2.0 f 3.3–0.2 3.0
PC —T a I C —V CE V CE(sat)—I C V BE(sat)—I C hFE —I C C ob —V CB ton, tstg, tf —I C Area of safe operation (ASO) 0 160 40 120 80 14020 100 60 (1) TC =Ta (2) With a 100 · 100 · 2mm Al heat sink (3) Without heat sink (PC =3.5W) (1) (2) (3) Ambient temperature Ta (˚C) Collector power dissipation PC (W ) TC =25˚C – 0.1mA – 0.2mA – 0.3mA – 0.4mA IB=– 0.5mA Collector to emitter voltage VCE (V) Collector current IC (A) – 0.1 –100 –10 – 0.3 –30 IC /IB=1000 25˚C –25˚C TC =100˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) – 0.1 –100 –10 – 0.3 –30 IC /IB=1000 TC =–25˚C 25˚C100˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 100 300 1000 3000 10000 30000 100000 VCE =5V TC =100˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 1000 100 300 IE=0 f=1MHz T C =25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 0– 8 –2 –6 –4 0.01 0.03 0.1 0.3 100 tstg ton tf Pulsed tw =1ms Duty cycle=1% I C /IB=1000 (–IB1=IB2) VCC =–50V TC =25˚C Collector current IC (A) Switching time ton,tstg,tf (ms) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 10ms t=1ms ICP IC Non repetitive pulse TC =25˚C DC Collector to emitter voltage VCE (V) Collector current IC (A)
R th(t)—t 10–3 10210–2 110–1 10 10 3 104 0.1 100 1000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V · 0.3A (3W) and without heat sink (2) PT=10V · 1.0A (10W) and with a 100 · 100 · 2mm Al heat sink (1) (2) Time t (s) Thermal resistance Rth(t) (˚C/W)