2SB1488 PANASONIC

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Technical content

Silicon PNP triple diffusion planer type For power switching n Features l High foward current transfer ratio hFE . l High-speed switching. l High collector to base voltage VCBO . l Allowing supply with the radial taping. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Emitter 2:Collector 3:Base MT2 Type Package 2.5–0.1 4.5–0.114.5–0.5 2.5–0.5 2.5–0.5 2.5–0.1 6.9–0.1 1.05 –0.05 (1.45) 4.00.7 0.8 0.15 0.5 0.21.01.0 0.65 max. 0.45 +0.1 –0.05 0.45 +0.1 –0.05 321 Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings –400 –400 – 0.5 150 –55 ~ +150 Unit V V V A A W n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Collector current fall time Collector output capacitance Symbol I CBO ICEO IEBO V CEO hFE1 *1 hFE2 V CE(sat) V BE(sat) fT ton tstg tf C ob Conditions V CB = –400V , IE = 0 V CE = –100V , IB = 0 V BE = –5V , IC = 0 IC = –1mA, IB = 0 V CE = –5V , IC = –50mA V CE = –5V , IC = –300mA*2 IC = –100mA, IB = –10mA*2 IC = –100mA, IB = –10mA*2 V CB = –10V , IE = 0.1A, f = 1MHz*2 IC = –100mA, RL = 1.5kW IB1 = –10mA, IB2 = 10mA V CC = –150V V CB = –10V , IE = 0, f = 1MHz min –400 typ – 0.25 – 0.8 0.4 5.5 0.5 max 280 – 0.5 –1.2 1.0 6.5 1.0 Unit mA mA mA V V V MHz ms ms ms pF * Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion *1hFE1 Rank classification Rank P Q hFE1 80 ~ 160 130 ~ 280 *2 Pulse measurement 1.2–0.1 0.65max. 0.45 0.1 0.05 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. (HW type)

0 160 40 120 80 14020 100 60 1.2 1.0 0.8 0.6 0.4 0.2 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ambient temperature Ta (˚C) Collector power dissipation PC (W ) –1.0 – 0.8 – 0.6 – 0.4 – 0.2 – 0.9 – 0.7 – 0.5 – 0.3 – 0.1 Ta=25˚C 0.1mA 0.5mA 1mA 5mA 10mA 50mA IB=100mA Collector to emitter voltage VCE (V) Collector current IC (mA ) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 IC /IB=5 Ta=100˚C 25˚C –25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 IC /IB=5 Ta=–25˚C 100˚C 25˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 100 300 1000 3000

10000 VCE =–5V

Ta=100˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 0.1 0.3 100 300

1000 VCE =–10V

Ta=25˚C Collector current IC (A) Transition frequency fT (MHz ) 100 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 0.01 0.03 0.1 0.3

100 Pulsed tw =1ms

Duty cycle=1% I C /IB=5(–IB1=IB2) VCC =–100V Ta=25˚C tstg tf ton Collector current IC (A) Switching time ton,tstg,tf (ms) PC — Ta I C — V CE V CE(sat) — IC V BE(sat) — IC hFE — IC fT — IC C ob — V CB ton, tstg, tf — IC