2SB1481 SAVANTIC
Document overview
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- PDF pages: 3
Technical content
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1481
DESCRIPTION
- With TO-220F package
- Complement to type 2SD2241
- High DC current gain.
- Low saturation voltage.
- DARLINGTON
APPLICATIONS
- For power amplifier applications PINNING Absolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -5 V IC Collector current ±4 A ICM Collector current-peak ±6 A TC=25 25 PC Collector dissipation Ta=25 2 W Tj Junction temperature 150 Tstg Storage temperature -55~150 PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Fig.1 simplified outline (TO-220F) and symbol
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1481 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP . MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=-10mA; IB=0 -100 V VCEsat Collector-emitter saturation voltage I C=-3A ; IB=-6mA -1.5 V VBEsat Base-emitter saturation voltage I C=-3A ; IB=-6mA -2.0 V ICBO Collector cut-off current V CB=-100V;IE=0 -2 µA IEBO Emitter cut-off current V EB=-5V;IC=0 -2.5 mA hFE-1 DC current gain I C=-1.5A ; VCE=-2V 2000 hFE-2 DC current gain I C=-3A ; VCE=-2V 1000 VECO Diode forward voltage I C=1A ; IB=0 2.0 V ton Turn-on time 0.15 µs tstg Storage time 0.80 µs tf Fall time IB1=-IB2=-6mA VCC@-30V; RL=10A 0.40 µs
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1481 PACKAGE OUTLINE Fig.2 Outline dimensions