2SB1481 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
(Iziieu ^£.mi-(2onductoi ^-Pioducti, Una. Ls iJ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Darlington Power Transistor TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 2SB1481
DESCRIPTION
- Collector-Emitter Breakdown Voltage- :V(BR)cEo=-100V(Min)
- High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, lc= -1.5A)
- Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (lc= -3A, IB= -6mA)
- Complement to Type 2SD2241
APPLICATIONS
- High power switching applications.
- Hammer drive, pulse motor drive applications, ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic I CM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Pulse Base Current-Continuous Collector Power Dissipation @Ta=25'C Collector Power Dissipation @TC=25°C Junction Temperature Storage Temperature VALUE -100 -100 -0.3 150 -55-150 UNIT V V V A A A W r W ! P 1 2 3 —lW' ' 1 • fff 1 ' R. «—T^- N 1.BA3E 2. COLLECTOR 3.BMITTER TO-220F package B - C __ . _p i
- ^ rt - > . . '* , H 1 ~';j,, ' -R- ' " D j -
- N - ui°Q0 mm DIM MIN A 14.95 B 10.00 C 4.40 D 0.75 F 3.10 H 3.70 J 0.50 K 13.4 L 1.10 N 5.00 Q 2.70 R 2.20 S 2.65 U 6.40 MAX 15.05 10.10 4.60 0.80 3.30 3.90 0.70 13.6 1.30 5.20 2.90 2.40 2.85 6.60 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
Silicon PNP Darlington Power Transistor 2SB1481
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified SYMBOL V(BR)CEO VcE(sat) VeE(sat) ICBO IEBO hpE-1 hFE-2 VECF PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain C-E Diode Forward Voltage CONDITIONS lc=-10rnA; IB= 0 lc= -3A; IB= -6mA lc= -3A; IB= -6mA VCB=-100V; IE=0 VEB= -5V; I0= 0 lc=-1.5A; VCE=-2V lc= -3A; VCE= -2V IF=1A MIN -100 2000 1000 TYP. MAX -1.5 -2.0 -2.0 -2.5 2.0 UNIT V V V uA mA V Switching Times ton tstg tf Turn-on Time Storage Time Fall Time IC=-3A, lBi=-lB2=-6mA, VGC= -30V;RL=10fi 0.15 0.80 0.40 w s u s u s