2SB1481 ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1481
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V (BR)CEO= -100V(Min)
- High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -1.5A)
- Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (IC= -3A, IB= -6mA) B
- Complement to Type 2SD2241
APPLICATIONS
- High power switching applications.
- Hammer drive, pulse motor drive applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Pulse -6 A IB Base Current-Continuous -0.3 A Collector Power Dissipation @Ta=25℃ 2 PC Collector Power Dissipation @TC=25℃ 25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1481
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 -100 V VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -6mA B -1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -3A; IB= -6mA B -2.0 V ICBO Collector Cutoff Current VCB= -100V; IE= 0 -2.0 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -2.5 mA hFE-1 DC Current Gain IC= -1.5A; VCE= -2V 2000 hFE-2 DC Current Gain IC= -3A; VCE= -2V 1000 VECF C-E Diode Forward Voltage IF= 1A 2.0 V Switching Times ton Turn-on Time 0.15 μs tstg Storage Time 0.80 isc Website：www.iscsemi.cn 2 μs tf Fall Time IC= -3A, IB1= -IB2= -6mA, VCC≈ -30V; R L= 10Ω 0.40 μs